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Effect of oxygen and nitrogen functionalization on the physical and electronic structure of graphene 被引量:3
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作者 Alexander J. Marsden Peter Brommer +9 位作者 James J. Mudd M. Adam Dyson robert Cook Maria Asensio Jose Avila Ana Levy Jeremy Sloan David Quigley Gavin r. Bell neil r. wilson 《Nano Research》 SCIE EI CAS CSCD 2015年第8期2620-2635,共16页
Covalent functionalization of graphene offers opportunities for tailoring its properties and is an unavoidable consequence of some graphene synthesis techniques. However, the changes induced by the functionalization a... Covalent functionalization of graphene offers opportunities for tailoring its properties and is an unavoidable consequence of some graphene synthesis techniques. However, the changes induced by the functionalization are not well understood. By using atomic sources to control the extent of the oxygen and nitrogen functionalization, we studied the evolution in the structure and properties at the atomic scale. Atomic oxygen reversibly introduces epoxide groups whilst, under similar conditions, atomic nitrogen irreversibly creates diverse functionalities including substitutional, pyridinic, and pyrrolic nitrogen. Atomic oxygen leaves the Fermi energy at the Dirac point (i.e., undoped), whilst atomic nitrogen results in a net n-doping; however, the experimental results are consistent with the dominant electronic effect for both being a transition from delocalized to localized states, and hence the loss of the signature electronic structure of graphene. 展开更多
关键词 GRAPHENE FUNCTIONALIZATION chemical vapor deposition density functional theory
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Weak mismatch epitaxy and structural feedback in graphene growth on copper foil
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作者 neil r. wilson Alexander J. Marsden +11 位作者 Mohammed Saghir Catherine J. Bromley renald Schaub Giovanni Costantini Thomas W. White Cerianne Partridge Alexei Barinov Pavel Dudin Ana M. Sanchez James J. Mudd Marc Walker Gavin r. Bell 《Nano Research》 SCIE EI CAS CSCD 2013年第2期99-112,共14页
Graphene growth by low-pressure chemical vapor deposition on low cost copper foils shows great promise for large scale applications. It is known that the local crystallography of the foil influences the graphene growt... Graphene growth by low-pressure chemical vapor deposition on low cost copper foils shows great promise for large scale applications. It is known that the local crystallography of the foil influences the graphene growth rate. Here we find an epitaxial relationship between graphene and copper foil. Interfacial restructuring between graphene and copper drives the formation of (nl0) facets on what is otherwise a mostly Cu(100) surface, and the facets in turn influence the graphene orientations from the onset of growth. Angle resolved photoemission shows that the electronic structure of the graphene is decoupled from the copper indicating a weak interaction between them. Despite this, two preferred orientations of graphene are found, ±8° from the Cu[010] direction, creating a non-uniform distribution of graphene grain boundary misorientation angles. Comparison with the model system of graphene growth on single crystal Cu(110) indicates that this orientational alignment is due to mismatch epitaxy. Despite the differences in symmetry the orientation of the graphene is defined by that of the copper. We expect these observations to not only have importance for controlling and understanding the growth process for graphene on copper, but also to have wider implications for the growth of two-dimensional materials on low cost metal substrates. 展开更多
关键词 GRAPHENE chemical vapordeposition mismatch epitaxy structural feedback low energy electrondiffraction angle resolvedphoto-emissionspectroscopy (ARPES)
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