Several methods of characterization of trap levels like I-V, C-V and transient spectroscopy (DLTS) were used to determine the accurate values of the activation energies of traps present in N+P junctions obtained after...Several methods of characterization of trap levels like I-V, C-V and transient spectroscopy (DLTS) were used to determine the accurate values of the activation energies of traps present in N+P junctions obtained after retrograde profile implantation of indium and boron on silicon. Four main traps located at Ev + 0.15 eV, Ev + 0.21 eV, Ev + 0.28 eV and Ev + 0.46 eV are reported. Shallow levels are also calculated from I-V characteristics. Concurrently, indium channel doped NMOSFETs are investigated showing the kink phenomenon. In order to discuss the relationship between the kink effect and the active indium trap level situated at 0.16 eV, the transient effects are studied by varying the integration time and the temperature. The effects of substrate polarization are also carried out showing the reduction of the kink with the bulk positive polarization.展开更多
文摘Several methods of characterization of trap levels like I-V, C-V and transient spectroscopy (DLTS) were used to determine the accurate values of the activation energies of traps present in N+P junctions obtained after retrograde profile implantation of indium and boron on silicon. Four main traps located at Ev + 0.15 eV, Ev + 0.21 eV, Ev + 0.28 eV and Ev + 0.46 eV are reported. Shallow levels are also calculated from I-V characteristics. Concurrently, indium channel doped NMOSFETs are investigated showing the kink phenomenon. In order to discuss the relationship between the kink effect and the active indium trap level situated at 0.16 eV, the transient effects are studied by varying the integration time and the temperature. The effects of substrate polarization are also carried out showing the reduction of the kink with the bulk positive polarization.
