The diffusion behaviour of 1.0 and 2.0MeV Au^(+)implanted into LiB_(3)O_(5)single crystal has been studied by the Rutherford backscattering of 2.1 MeV He ions.Annealing was performed at temperatures of 600,700,and 800...The diffusion behaviour of 1.0 and 2.0MeV Au^(+)implanted into LiB_(3)O_(5)single crystal has been studied by the Rutherford backscattering of 2.1 MeV He ions.Annealing was performed at temperatures of 600,700,and 800℃each for 30 min.The results show that the diffusion behaviour is quite different in two cases.In LiB_(3)O_(5),the depth distribution of the 1.0MeV Au is nearly Gaussian and becomes bimodal after annealing at 800℃for 30 min.But in the case of 2.0 MeV,the depth distribution of as implanted Au^(+)in LiB_(3)O_(5)has splitting behaviour.After 800℃for 30 min annealing,there is no obvious diffusion observed.The precise interpretation is needed.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No.19775031,the Hong Kong University of Science and Technology Research Infracture Grant R191/92SC05Laboratory of Heavy Ion Physics,Peking University。
文摘The diffusion behaviour of 1.0 and 2.0MeV Au^(+)implanted into LiB_(3)O_(5)single crystal has been studied by the Rutherford backscattering of 2.1 MeV He ions.Annealing was performed at temperatures of 600,700,and 800℃each for 30 min.The results show that the diffusion behaviour is quite different in two cases.In LiB_(3)O_(5),the depth distribution of the 1.0MeV Au is nearly Gaussian and becomes bimodal after annealing at 800℃for 30 min.But in the case of 2.0 MeV,the depth distribution of as implanted Au^(+)in LiB_(3)O_(5)has splitting behaviour.After 800℃for 30 min annealing,there is no obvious diffusion observed.The precise interpretation is needed.
