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Atomic layer deposition of copper thin film and feasibility of deposition on inner walls of waveguides
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作者 Yuqing XIONG Hengjiao GAO +1 位作者 ni ren Zhongwei LlU 《Plasma Science and Technology》 SCIE EI CAS CSCD 2018年第3期146-150,共5页
Copper thin films were deposited by plasma-enhanced atomic layer deposition at low temperature,using copper(I)-N,N′-di-sec-butylacetamidinate as a precursor and hydrogen as a reductive gas.The influence of temperatur... Copper thin films were deposited by plasma-enhanced atomic layer deposition at low temperature,using copper(I)-N,N′-di-sec-butylacetamidinate as a precursor and hydrogen as a reductive gas.The influence of temperature,plasma power,mode of plasma,and pulse time,on the deposition rate of copper thin film,the purity of the film and the step coverage were studied.The feasibility of copper film deposition on the inner wall of a carbon fibre reinforced plastic waveguide with high aspect ratio was also studied.The morphology and composition of the thin film were studied by atomic force microscopy and x-ray photoelectron spectroscopy,respectively.The square resistance of the thin film was also tested by a four-probe technique.On the basis of on-line diagnosis,a growth mechanism of copper thin film was put forward,and it was considered that surface functional group played an important role in the process of nucleation and in determining the properties of thin films.A high density of plasma and high free-radical content were helpful for the deposition of copper thin films. 展开更多
关键词 atomic layer deposition COPPER inner wall WAVEGUIDE high aspect ratio
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