Na＋doped WO3 nanowire photocatalysts were prepared by using post-treatment（surface doping） and in situ（bulk doping） doping methods. Photocatalytic degradation of Methyl Blue was tested under visible light irradia...Na＋doped WO3 nanowire photocatalysts were prepared by using post-treatment（surface doping） and in situ（bulk doping） doping methods. Photocatalytic degradation of Methyl Blue was tested under visible light irradiation, the results showed that 1 wt.% Na＋bulk-doped WO3 performed better, with higher photoactivity than surface-doped WO3. Photoelectrochemical characterization revealed the differences in the photocatalytic process for surface doping and bulk doping. Uniform bulk doping could generate more electron–hole pairs, while minimizing the chance of electron–hole recombination. Some bulk properties such as the bandgap, Fermi level and band position could also be adjusted by bulk doping, but not by surface doping.展开更多
基金supported by the Project of Shandong Province Higher Educational Science and Technology Program (No. J12LA09)the Applied Basic Research Project of the Ministry of Transport in China (No. 2013319817050)+1 种基金the National Natural Science Foundation of China (No. 21407098)the Promotive research fund for excellent young and middle-aged scientists of Shandong Province (No. BS2014HZ012)
文摘Na＋doped WO3 nanowire photocatalysts were prepared by using post-treatment（surface doping） and in situ（bulk doping） doping methods. Photocatalytic degradation of Methyl Blue was tested under visible light irradiation, the results showed that 1 wt.% Na＋bulk-doped WO3 performed better, with higher photoactivity than surface-doped WO3. Photoelectrochemical characterization revealed the differences in the photocatalytic process for surface doping and bulk doping. Uniform bulk doping could generate more electron–hole pairs, while minimizing the chance of electron–hole recombination. Some bulk properties such as the bandgap, Fermi level and band position could also be adjusted by bulk doping, but not by surface doping.
