A laser scanning confocal imaging-surface plasmon resonance （LSCI-SPR） instrument integrated with a wavelength-dependent surface plasmon resonance （SPR） sensor and a laser scanning confocal microscopy （LSCM） is ...A laser scanning confocal imaging-surface plasmon resonance （LSCI-SPR） instrument integrated with a wavelength-dependent surface plasmon resonance （SPR） sensor and a laser scanning confocal microscopy （LSCM） is built to detect the bonding process of human IgG and fluorescent-labeled affinity purified antibodies in real time. The shifts of resonant wavelength at different reaction time stages are obtained by SPR, corresponding well with the changes of the fluorescence intensity collected by using LSCM. The instrument shows the merits of the combination and complementation of the SPR and LSCM, with such advantages as quantificational analysis, high spatial resolution and real time monitor, which are of great importance for practical applications in biosensor and life science.展开更多
纳米激光作为一种纳米级相干光源,是光电集成芯片的关键器件.激光器进一步小型化的阻碍在于随着激光器谐振腔体积的减小,其损耗迅速增大.连续域束缚态(bound states in the continuum,BICs)能有效降低全介质结构的辐射损耗.本文提出一...纳米激光作为一种纳米级相干光源,是光电集成芯片的关键器件.激光器进一步小型化的阻碍在于随着激光器谐振腔体积的减小,其损耗迅速增大.连续域束缚态(bound states in the continuum,BICs)能有效降低全介质结构的辐射损耗.本文提出一种基于全介质共振波导光栅(resonant waveguide grating structures,RWGs)准BIC的纳米激光器,可有效降低纳米激光器的阈值.将传统两部分光栅转换为四部分光栅,可激发波导结构的准BIC模式.本文数值研究了该模式的受激辐射放大特性.结果表明:TE偏振光照射下,基于四部分光栅的RWG结构的纳米激光阈值比基于传统RWG结构的阈值低20.86%.TM偏振光照射时,阈值比传统RWG结构降低了3.3倍.而且TE偏振光照射时纳米激光的阈值比TM偏振光照射时阈值大约低一个数量级,这是因为TE偏振光照射时,结构的电场局域在波导层内,增强了光与增益材料的相互作用,从而降低了纳米激光的阈值.展开更多
CaCu _(3)Ti_(4)O_(12)(CCTO)thin films were fabricated on ITO−covered MgO(100)substrates.The rectification characteristics were observed in the CCTO capacitance structure with Pt top electrodes at temperatures ranging ...CaCu _(3)Ti_(4)O_(12)(CCTO)thin films were fabricated on ITO−covered MgO(100)substrates.The rectification characteristics were observed in the CCTO capacitance structure with Pt top electrodes at temperatures ranging from 150 K to 330 K,which are attributed to the formation of a Schottky junction between n-type semiconducting CCTO and Pt due to the difference of their work functions.At low forward-bias voltage,the current-voltage characteristics of the Schottky junction follow J=JsD exp[qV/(k0T)].A strong decrease in ideality factor with the increasing temperature is obtained by linear fitting at the low bias voltage.展开更多
基金supported by the Instrument Developing Project of the Chinese Academy of Sciences (Grant No.YZ200740)the National Natural Science Foundation of China (Grant Nos.60978034 and 10974019)the National High Technology Research and Development Program of China (Grant No.2009AA03Z318)
文摘A laser scanning confocal imaging-surface plasmon resonance （LSCI-SPR） instrument integrated with a wavelength-dependent surface plasmon resonance （SPR） sensor and a laser scanning confocal microscopy （LSCM） is built to detect the bonding process of human IgG and fluorescent-labeled affinity purified antibodies in real time. The shifts of resonant wavelength at different reaction time stages are obtained by SPR, corresponding well with the changes of the fluorescence intensity collected by using LSCM. The instrument shows the merits of the combination and complementation of the SPR and LSCM, with such advantages as quantificational analysis, high spatial resolution and real time monitor, which are of great importance for practical applications in biosensor and life science.
文摘纳米激光作为一种纳米级相干光源,是光电集成芯片的关键器件.激光器进一步小型化的阻碍在于随着激光器谐振腔体积的减小,其损耗迅速增大.连续域束缚态(bound states in the continuum,BICs)能有效降低全介质结构的辐射损耗.本文提出一种基于全介质共振波导光栅(resonant waveguide grating structures,RWGs)准BIC的纳米激光器,可有效降低纳米激光器的阈值.将传统两部分光栅转换为四部分光栅,可激发波导结构的准BIC模式.本文数值研究了该模式的受激辐射放大特性.结果表明:TE偏振光照射下,基于四部分光栅的RWG结构的纳米激光阈值比基于传统RWG结构的阈值低20.86%.TM偏振光照射时,阈值比传统RWG结构降低了3.3倍.而且TE偏振光照射时纳米激光的阈值比TM偏振光照射时阈值大约低一个数量级,这是因为TE偏振光照射时,结构的电场局域在波导层内,增强了光与增益材料的相互作用,从而降低了纳米激光的阈值.
基金by the National Key Basic Research Program of China under Grant No 2011CB301802.
文摘CaCu _(3)Ti_(4)O_(12)(CCTO)thin films were fabricated on ITO−covered MgO(100)substrates.The rectification characteristics were observed in the CCTO capacitance structure with Pt top electrodes at temperatures ranging from 150 K to 330 K,which are attributed to the formation of a Schottky junction between n-type semiconducting CCTO and Pt due to the difference of their work functions.At low forward-bias voltage,the current-voltage characteristics of the Schottky junction follow J=JsD exp[qV/(k0T)].A strong decrease in ideality factor with the increasing temperature is obtained by linear fitting at the low bias voltage.
