SiC-C films with different content of SiC were deposited with r. f. magnetron sputtering followed by argon ion bombardment. These films were then permeated by hydrogen gas under the pressure of 3.23×107 Pa for 3h...SiC-C films with different content of SiC were deposited with r. f. magnetron sputtering followed by argon ion bombardment. These films were then permeated by hydrogen gas under the pressure of 3.23×107 Pa for 3h at 500K. AES and XPS were used to analyze chemical bonding states of C and Si in the SiC-C films as well as contaminating oxygen before and after hydrogen gas permeation in order to study the effect of hydrogen on them. Related mechanism was discussed in this paper.展开更多
基金National Natural Science Foundation of China (5978100)
文摘SiC-C films with different content of SiC were deposited with r. f. magnetron sputtering followed by argon ion bombardment. These films were then permeated by hydrogen gas under the pressure of 3.23×107 Pa for 3h at 500K. AES and XPS were used to analyze chemical bonding states of C and Si in the SiC-C films as well as contaminating oxygen before and after hydrogen gas permeation in order to study the effect of hydrogen on them. Related mechanism was discussed in this paper.
