Two-dimensional(2D)materials have attracted increasing attention for their outstanding structural and electrical properties.However,for mass-production of field effect transistors(FETs)and potential applications in in...Two-dimensional(2D)materials have attracted increasing attention for their outstanding structural and electrical properties.However,for mass-production of field effect transistors(FETs)and potential applications in integrated circuits,large-area and uniform 2D thin films with high mobility,large on-off ratio,and desired polarity are needed to synthesize firstly.Here,a transfer-free growth method for platinum diselenide(PtSe2)films has been developed.The PtSe2 films have been synthesized with various thicknesses in centimeter-sized scale.Typical FET made from a few layer PtSe2 show p-type unipolar,with a high field-effect hole mobility of 6.2 cm^(2) V^(−1) s^(−1) and an on-off ratio of 5×10^(3).The versatile semimetal-unipolar-ambipolar transition in synthesized PtSe2 films is also firstly observed as the thickness thinning.This work realizes the large-scale preparation of PtSe2 with prominent electrical properties and provides a new strategy for polarity's modulation.展开更多
基金support from the National Natural Science Foundation of China(61835012,61722408,21771040,61574151,61574152)the Key Research Project of Frontier Sciences of Chinese Academy of Sciences(QYZDB-SSW-JSC016,QYZDB-SSW-JSC042)+1 种基金the National Key Research and Development Program of China(2017YFA0207303,2016YFA0203900)the 1000 Plan Program for Young Talents.
文摘Two-dimensional(2D)materials have attracted increasing attention for their outstanding structural and electrical properties.However,for mass-production of field effect transistors(FETs)and potential applications in integrated circuits,large-area and uniform 2D thin films with high mobility,large on-off ratio,and desired polarity are needed to synthesize firstly.Here,a transfer-free growth method for platinum diselenide(PtSe2)films has been developed.The PtSe2 films have been synthesized with various thicknesses in centimeter-sized scale.Typical FET made from a few layer PtSe2 show p-type unipolar,with a high field-effect hole mobility of 6.2 cm^(2) V^(−1) s^(−1) and an on-off ratio of 5×10^(3).The versatile semimetal-unipolar-ambipolar transition in synthesized PtSe2 films is also firstly observed as the thickness thinning.This work realizes the large-scale preparation of PtSe2 with prominent electrical properties and provides a new strategy for polarity's modulation.