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Effects of AlN Layer and Impurities on Optical Properties of GaN
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作者 YANGJing-hai GONGJie +4 位作者 YANGLi-li FANHou-gang ZHANGYong-jun o.zseboek CHENGang 《Chemical Research in Chinese Universities》 SCIE CAS CSCD 2005年第1期78-82,共5页
The effects of the incorporated oxygen and the different buffer layers on the optical properties and surface morphology of GaN were studied. The results show that the decrease of the concentration of the incorporated ... The effects of the incorporated oxygen and the different buffer layers on the optical properties and surface morphology of GaN were studied. The results show that the decrease of the concentration of the incorporated oxygen has no effect on the surface morphology, but improves the optical properties. While the introduction of the AlN buffer layer makes not only the surface morphology but also the optical properties improve. Both the oxygen contamination from the nitrogen source and the resulted morphology are directly related to the line width of the low-temperature photoluminescence(PL) spectra. 展开更多
关键词 GAN Molecular beam epitaxy PHOTOLUMINESCENCE MORPHOLOGY
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