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氢空位簇调控锗烷的电子结构和分子掺杂
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作者 杨子豪 刘刚 +4 位作者 吴木生 石晶 欧阳楚英 杨慎博 徐波 《物理学报》 SCIE EI CAS CSCD 北大核心 2023年第12期241-251,共11页
锗烷因其合适的带隙、较高的电子迁移速率、较好的环境稳定性、较小的电噪声和超薄的几何结构,有望取代现有硅基或锗基材料成为下一代半导体器件的理想载体.基于密度泛函理论和非平衡格林函数的第一性原理方法,研究了不同构型和浓度的... 锗烷因其合适的带隙、较高的电子迁移速率、较好的环境稳定性、较小的电噪声和超薄的几何结构,有望取代现有硅基或锗基材料成为下一代半导体器件的理想载体.基于密度泛函理论和非平衡格林函数的第一性原理方法,研究了不同构型和浓度的氢空位簇对锗烷电子结构及锗烷中四硫富瓦烯(tetrathiafulvalene,TTF)分子掺杂性能的影响.计算结果表明,不同构型氢空位簇的引入可诱导Germanane Dehydrogenated-x H(GD-xH)体系产生不同性质的磁性,且磁矩大小亦与Lieb定理的预测结果相符,并能在G_(D-x H)(x=1,4,6)体系自旋向下的能带结构中实现由缺陷态引起的类p型半导体掺杂效应,其电子激发所需的能量则会随着体系脱氢浓度的升高而不断降低.吸附TTF分子后,G/TTF和G_(D-xH)/TTF(x=1,2,6)体系表现出分子掺杂效应,且G_(D-x H)/TTF(x=1,6)体系因分子轨道与缺陷态的杂化作用,可在自旋向上与自旋向下的能带结构中形成不同的掺杂类型.进一步的量子输运计算还表明,Armchair和Zigzag类型的锗烷基器件表现为明显的各向同性,且TTF分子吸附所导致的载流子掺杂可大幅提高其I-V特性. 展开更多
关键词 锗烷 缺陷 分子吸附 电子性质
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First-Principles Calculation of Lithium Adsorption and Diffusion on Silicene 被引量:1
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作者 HUANG Juan CHEN Hong-Jin +3 位作者 WU Mu-Sheng LIU Gang ouyang chu-ying XU Bo 《Chinese Physics Letters》 SCIE CAS CSCD 2013年第1期154-157,共4页
The adsorption and diffusion of lithium on silicene are studied by using the first-principles method.It is found that the adsorption energy of Li adsorbing on silicene is significantly larger than that of Li adsorbing... The adsorption and diffusion of lithium on silicene are studied by using the first-principles method.It is found that the adsorption energy of Li adsorbing on silicene is significantly larger than that of Li adsorbing on graphene.With the increasing concentration of adsorbed Li atoms,the adsorption energy also increases.The diffusion barrier of Li on silicene is relatively low,which is insensitive to the concentration of adsorbed atoms. 展开更多
关键词 method. ADSORPTION adsorbed
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The Origin of BC_(7) Sheet Metallicity and the Tuning of its Electronic Properties by Hydrogenation
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作者 LEI Xue-Ling LIU Gang +3 位作者 WU Mu-Sheng XU Bo ouyang chu-ying PAN Bi-Cai 《Chinese Physics Letters》 SCIE CAS CSCD 2013年第6期153-156,共4页
Using first-principles calculations,we investigate the structural,electronic and hydrogenated properties of the hexagonal BC_(7) sheet.The computed energy bands and density of states indicate that the BC_(7) sheet is ... Using first-principles calculations,we investigate the structural,electronic and hydrogenated properties of the hexagonal BC_(7) sheet.The computed energy bands and density of states indicate that the BC_(7) sheet is a metal,and its metallicity mainly originates from the non-bonding pz electrons of the diagonal carbon of the B atom.When these carbon atoms are fully passivated by H atoms,the BC_(7) sheet becomes a semiconductor with a band gap of 2.41 eV.Our studies demonstrate that changing both the proportion of the boron atoms in the boron carbon sheet and its hydrogenation can tune the electronic properties of boron carbon two-dimensional material. 展开更多
关键词 BORON carbon electronic
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Vacancy and H Interactions in Nb
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作者 RAO Jian-Ping ouyang chu-ying +1 位作者 LEI Min-Sheng JIANG Feng-Yi 《Chinese Physics Letters》 SCIE CAS CSCD 2011年第12期219-222,共4页
The vacancy and H interactions in bcc Nb are important due to their implication in understanding of the H induced damage of Nb metallic membrane used in H2 separation and purification application.Using density functio... The vacancy and H interactions in bcc Nb are important due to their implication in understanding of the H induced damage of Nb metallic membrane used in H2 separation and purification application.Using density functional theory,the vacancy formation energy and vacancy(Vac)−H interaction energies are calculated.The results show that vacancies have a strong trapping effect on H atoms,which lowers the formation energy of Vac-nH clusters substantially.The concentration of Vac−nH clusters is evaluated using a statistical model and the dependence of the concentration on the H−to-M ratio is obtained.It is shown that the concentration of the Vac-nH clusters can be as high as 10−3 at 573 K,i.e.one Vac-nH cluster per 1000 atoms,in good agreement with the experimental observations. 展开更多
关键词 VACANCY TRAPPING SEPARATION
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