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Characterisation of Zinc Oxynitride Thin Films Prepared Using Zinc(II) Complex of Hexamethylenetetramine as the Precursor
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作者 olumide oluwole akinwunmi Oluwaseun Philip Adelabu +4 位作者 Adetokunbo Temitope Famojuro Olakunle A. Akinwumi Priscilla Oluwatumilara Olaopa Kehinde Folorunso Olafisan Ezekiel Oladele Bolarinwa Ajayi 《Materials Sciences and Applications》 CAS 2022年第8期479-489,共11页
A Zinc(II) complex of hexamethylenetetramine was prepared as a single source precursor and used to deposit zinc oxynitride thin films. The thin films were deposited on soda-lime glass substrates using the Metal Organi... A Zinc(II) complex of hexamethylenetetramine was prepared as a single source precursor and used to deposit zinc oxynitride thin films. The thin films were deposited on soda-lime glass substrates using the Metal Organic Chemical Vapour Deposition (MOCVD) technique at the deposition temperature of 370°C and 390°C, respectively. The Fourier Transform Infrared Spectroscopy (FTIR) was used to determine the functional groups in the precursor, with stretching frequency for O-H, N-H, and C-H observed. The deposited films were characterized using UV-Visible Spectroscopy, Scanning Electron Microscopy (SEM), Elemental diffraction X-ray (EDX), and X-ray Diffractometer (XRD). A direct bandgap of 3.15 eV and 3.18 eV was obtained from the film deposited at 370°C and 390°C, respectively, using the Envelope Method. In comparison, a bandgap of 3.19 eV and 3.21 eV was obtained using the absorption spectrum fitting (ASF) method. The SEM revealed that the film is homogeneous, dense, and compact, composed of cluster grains. The EDX confirmed the presence of Zinc, Nitrogen and Oxygen. The X-ray Diffraction indicated the polycrystalline nature of the film. 展开更多
关键词 Zinc Oxynitride Metal Organic Chemical Vapour Deposition (MOCVD) PRECURSOR Characterisation Thin Film
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Some Properties of Manganese Oxide (Mn-O) and Lithium Manganese Oxide (Li-Mn-O) Thin Films Prepared via Metal Organic Chemical Vapor Deposition (MOCVD) Technique
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作者 Kabir O. Oyedotun Marcus Adebola Eleruja +7 位作者 Bolutife Olofinjana olumide oluwole akinwunmi Olusoji O.Ilori Ezekiel Omotoso Emmanuel. Ajenifuja Adetokunbo T. Famojuro Eusebius I. Obianjuwa Ezekiel Oladele Bolarlnwa Ajay 《材料科学与工程(中英文B版)》 2015年第5期231-242,共12页
关键词 金属有机化学气相沉积 锂锰氧化物 薄膜沉积 MOCVD 制备 技术 性质 紫外可见光谱
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Effect of Deposition Temperature on Some Properties of MOCVD Molybdenum Sulphide Thin Films
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作者 Bolutife Olofinjana Gabriel Osaze Egharevba +2 位作者 Bidini Alade Taleatu olumide oluwole akinwunmi Ezekiel Oladele Bolarinwa Ajayi 《材料科学与工程(中英文B版)》 2014年第4期78-85,共8页
关键词 沉积温度 MOCVD 钼薄膜 硫化钼 金属有机化学气相沉积 扫描电子显微镜 性质 原子力显微镜
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Preparation and Some Properties of Metal Organic Chemical Vapour Deposited Al-Doped ZnO Thin Films Using Single Solid Precursors
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作者 olumide oluwole akinwunmi Johnson Ayodele O. Ogundeji +4 位作者 Adetokunbo Temitope Famojuro Olakunle A. Akinwumi Olusoji O. Ilori Olatomide G. Fadodun Ezekiel Oladele Bolarinwa Ajayi 《Journal of Modern Physics》 2018年第11期2073-2089,共17页
Zinc Oxide (ZnO) and Aluminium doped ZnO (AZO) thin films were deposited on soda lime glass by Metal Organic Chemical Vapour deposition technique (MOCVD), using prepared compound mixtures of Zinc Acetate di-hydrate (Z... Zinc Oxide (ZnO) and Aluminium doped ZnO (AZO) thin films were deposited on soda lime glass by Metal Organic Chemical Vapour deposition technique (MOCVD), using prepared compound mixtures of Zinc Acetate di-hydrate (Zn(CH3COO)2&sdot;2H2O;ZAD) and Aluminium Acetyl-Acetonate (Al(C5H702)3;AAA) precursors at a temperature of 420&deg;C. Effects of the varying mole percent concentrations of AAA precursor additives on the Al dopant concentrations in ZnO were systematically studied. The observations were made via investigations carried out on the morphological, optical, electrical and compositional properties of the deposited thin films. The thin films morphology was found to be strongly dependent on the varying concentration of AAA in the precursor mixtures. The average optical transmittance of the thin films in the uv-visible region was over 85% except 5 mol.% Al. While the energy band gaps were found to be in range of 3.27 - 3.36 eV. There is a blue-shift of the energy band edge observed between 0 and 5 mol.% AAA, which may be due to Burstein-Moss’ band gap widening effect and an opposing band gap renormalization effect at 10 mol.% AAA along with an extra band gap stabilization effect (Roth’s effect) at 15 mol.% AAA in rather quasi-sinusoidal or anomalous behaviour. The optical transmittance and electrical conductivity of ZnO were enhanced with addition of Al dopants. The RBS confirm the presence of Al, Zn and O, and evidence that Al dopants were successfully incorporated into the ZnO. 展开更多
关键词 ZnO Thin Film ZNO:AL MOCVD Optical PROPERTIES AAA ZAD Electrical PROPERTIES FESEM UV-VIS Optoelectronic PROPERTIES
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Synthesis and Characterization of Metal Organic Chemical Vapour Deposited Chromium Doped Zinc Oxide Thin Film for Gas Sensing Applications
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作者 olumide oluwole akinwunmi Olakunle A. Akinwumi +1 位作者 Johnson Ayodele O. Ogundeji Adetokunbo Temitope Famojuro 《Materials Sciences and Applications》 2018年第10期844-857,共14页
Chromium (Cr) doped Zinc oxide ZnO thin films were deposited onto glass substrates by Metal Organic Chemical Vapour Deposition (MOCVD) technique with varying dopant concentration at a temperature of 420°C. The ef... Chromium (Cr) doped Zinc oxide ZnO thin films were deposited onto glass substrates by Metal Organic Chemical Vapour Deposition (MOCVD) technique with varying dopant concentration at a temperature of 420°C. The effect of the chromium concentration on morphological, structural, optical, electrical and gas sensing properties of the films were investigated. The scanning electron microscopy results revealed that the Cr concentration has great influence on the crystallinity, surface smoothness and grain size. X-ray diffraction (XRD) studies shows that films were polycrystalline in nature and grown as a hexagonal wurtzite structure. A direct optical band energy gap of 3.32 to 3.10 eV was obtained from the optical measurements. The transmission was found to decrease with increasing Cr doping concentration. Rutherford Backscattering Spectroscopy (RBS) analysis also demonstrates that Cr ions are substitutionally incorporated into ZnO. I-V characteristic of the film shows a resistivity ranges from 1.134 × 10-2 · cm to 1.24 × 10-2 · cm at room temperature. The gas sensing response of the films were enhanced with incorporation of Cr as a dopant with optimum operating temperature around 200°C. 展开更多
关键词 Zinc Oxide Thin Films METAL Organic Chemical VAPOUR Deposition Gas Sensors
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Synthesis and Characterization of Metal Organic Chemical Vapour Deposited Copper Titanium Oxide (Cu-Ti-O) Thin Films from Single Solid Source Precursor
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作者 Oladepo Fasakin Marcus Adebola Eleruja +3 位作者 olumide oluwole akinwunmi Bolutife Olofinjana Emmanuel Ajenifuja Ezekiel Oladele Bolarinwa Ajayi 《Journal of Modern Physics》 2013年第12期1-6,共6页
Thin films of copper titanium oxide were deposited by metal organic chemical vapour deposition technique from the synthesized single solid source precursor, copper titanium acetylacatonate Cu [Ti(C5H7O2)3] at the depo... Thin films of copper titanium oxide were deposited by metal organic chemical vapour deposition technique from the synthesized single solid source precursor, copper titanium acetylacatonate Cu [Ti(C5H7O2)3] at the deposition temperature of 420°C. The deposited films were characterized using Rutherford Backscattering Spectroscopy, Scanning Electron Microscopy with Energy Dispersive X-Ray facility attached to it, X-Ray Diffractometry, UV-Visible Spectrometry and van-der Pauw Conductivity measurement. Results show that the thickness of the prepared film is determined as 101.236 nm and the film is amorphous in structure, having average grain size of approximately 1 μm. The optical behaviour showed that the absorption edge of the film was at 918 nm near infrared with corresponding direct energy band gap of 1.35 eV. The electrical characterization of the film gave the values of resistivity, sheet resistance and conductivity of the film as 3.43 × 10-1 Ω-cm, 3.39 × 106 Ω/square and 2.91 (Ω-cm)-1 respectively. 展开更多
关键词 Thin Film COPPER Titanium Oxide Metalorganic Chemical VAPOUR DEPOSITION (MOCVD)
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Synthesis and Characterization of CdS, ZnS and CdZnS Nanoparticles Embedded in Polystyrene
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作者 olumide oluwole akinwunmi Gabriel O. Egharevba Ezekiel Oladele Bolarinwa Ajayi 《Journal of Modern Physics》 2014年第5期257-266,共10页
The nano dispersions (colloids) of Cadmium Sulfide, Zinc Sulfide and Cadmium Zinc Sulfide were prepared by modified metathesis reaction between CdCl2, ZnCl2 and Na2S. The prepared sulfides were embedded in polystyrene... The nano dispersions (colloids) of Cadmium Sulfide, Zinc Sulfide and Cadmium Zinc Sulfide were prepared by modified metathesis reaction between CdCl2, ZnCl2 and Na2S. The prepared sulfides were embedded in polystyrene to form nano-composites. The size, morphology and composition of the nanoparticles on the surface of the composites were examined by using UV/VIS Spectroscopy, Scanning Electron Microscopy (SEM), High Resolution Transmission Electron Microscopy (HRTEM), Energy Dispersive Spectroscopy (EDS) and Particle Induced X-ray Emission (PIXE). The UV-spectrum shows a shift in the band gap towards high energy while the High Resolution Transmission Electron Microscope (HRTEM) analysis shows well resolved nanoparticles with particle sizes between 2-10 nm. The SEM shows that the nanoparticles are in form of nano clusters. The blue shift of the absorption band makes it possible to evaluate the size of the nanocrystallites, which is in agreement with that obtained from HRTEM. The composition as revealed by the EDS shows that the ratios of Cd:S, Zn:S and Cd:Zn:S are approximately 23:20, 58:42 and 32:35:33, respectively. The PIXE spectra confirmed the presence of expected elements and also reveal the presence of impurities. 展开更多
关键词 NANO-PARTICLE NANO-COMPOSITE
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