The commercially available 4000-Watt continuous-wave(CW)Erbium-doped-fiber laser,emitting at the 1567-nm wavelength where the atmosphere has high transmission,provides an opportunity for harvesting electric power at r...The commercially available 4000-Watt continuous-wave(CW)Erbium-doped-fiber laser,emitting at the 1567-nm wavelength where the atmosphere has high transmission,provides an opportunity for harvesting electric power at remote“off the grid”locations using a multi-module photovoltaic(PV)“receiver”panel.This paper proposes a 32-element monocrystalline thick-layer Germanium PV panel for efficient harvesting of a collimated 1.13-m-diam beam.The 0.78-m^(2) PV panel is constructed from commercial Ge wafers.For incident CW laser-beam power in the 4000 to 10,000 W range,our thermal,electrical,and infrared simulations predict 660 to 1510 Watts of electrical output at the panel temperatures of 350 to 423 K.展开更多
Despite the recent success of GeSn infrared lasers,the high lasing threshold currently limits their integration into practical applications.While structural defects in epitaxial GeSn layers have been identified as one...Despite the recent success of GeSn infrared lasers,the high lasing threshold currently limits their integration into practical applications.While structural defects in epitaxial GeSn layers have been identified as one of the major bottlenecks towards low-threshold GeSn lasers,the effect of defects on the lasing threshold has not been well studied yet.Herein,we experimentally demonstrate that the reduced defect density in a GeSn-on-insulator substrate improves the lasing threshold significantly.We first present a method of obtaining high-quality GeSn-oninsulator layers using low-temperature direct bonding and chemical–mechanical polishing.Low-temperature photoluminescence measurements reveal that the reduced defect density in GeSn-on-insulator leads to enhanced spontaneous emission and a reduced lasing threshold by0 times andtimes,respectively.Our result presents a new path towards pushing the performance of GeSn lasers to the limit.展开更多
基金the support of the US Air Force Office of Scientific Research on Grant No.FA9550-21-1-0347.Osupport from NSERC Canada(Discovery,SPG,and CRD Grants),Canada Research Chairs,Canada Foundation for Innovation,Mitacs,PRIMA Qu ebec,Defence Canada(Innovation for Defence Excellence and Security,IDEaS)+2 种基金the European Union’s Horizon Europe research and innovation program under grant agreement No 101070700(MIRAQLS)the U.S.Army Research Office on Grant No.W911NF-22-1-0277the U.S.Air Force Office of Scientific Research on Grant No.FA9550-23-1-0763.
文摘The commercially available 4000-Watt continuous-wave(CW)Erbium-doped-fiber laser,emitting at the 1567-nm wavelength where the atmosphere has high transmission,provides an opportunity for harvesting electric power at remote“off the grid”locations using a multi-module photovoltaic(PV)“receiver”panel.This paper proposes a 32-element monocrystalline thick-layer Germanium PV panel for efficient harvesting of a collimated 1.13-m-diam beam.The 0.78-m^(2) PV panel is constructed from commercial Ge wafers.For incident CW laser-beam power in the 4000 to 10,000 W range,our thermal,electrical,and infrared simulations predict 660 to 1510 Watts of electrical output at the panel temperatures of 350 to 423 K.
基金Mitacs,Innovation for Defence Excellence and Security,IDEaS,PRIMA Québec,Canada Foundation for Innovation,Canada Research Chairs,Natural Sciences and Engineering Research Council of Canada,iGrant of Singapore A*STAR(AME IRG(A2083c0053))National Research Foundation Singapore(Competitive Research Program(NRF-CRP19-2017-01)+3 种基金NRF-ANR Joint Grant(NRF2018-NRF-ANR009 TIGER))Ministry of Education-Singapore(Ac RF TIER 12019-T1-002-050(RG 148/19(S))AcRF TIER 2(MOE2018-T2-2-011(S))AcRF Tier 2(T2EP50121-0001(MOE-000180-01))。
文摘Despite the recent success of GeSn infrared lasers,the high lasing threshold currently limits their integration into practical applications.While structural defects in epitaxial GeSn layers have been identified as one of the major bottlenecks towards low-threshold GeSn lasers,the effect of defects on the lasing threshold has not been well studied yet.Herein,we experimentally demonstrate that the reduced defect density in a GeSn-on-insulator substrate improves the lasing threshold significantly.We first present a method of obtaining high-quality GeSn-oninsulator layers using low-temperature direct bonding and chemical–mechanical polishing.Low-temperature photoluminescence measurements reveal that the reduced defect density in GeSn-on-insulator leads to enhanced spontaneous emission and a reduced lasing threshold by0 times andtimes,respectively.Our result presents a new path towards pushing the performance of GeSn lasers to the limit.
