Effects of LO-phonon contribution on the electronic and the optical properties are investigated in a Cdo.sZno.2 Se/ZnSe quantum dot in the presence of magnetic field strength. The magneto-polaron induced hydro- genic ...Effects of LO-phonon contribution on the electronic and the optical properties are investigated in a Cdo.sZno.2 Se/ZnSe quantum dot in the presence of magnetic field strength. The magneto-polaron induced hydro- genic binding energy as a function of dot radius in the wide band gap quantum dot is calculated. The oscilla- tor strength and the spontaneous lifetime are studied taking into account the spatial confinement, magnetic field strength and the phonon contribution. Numerical calculations are carried out using variational formulism within the single band effective mass approximation. The optical properties are computed with the compact density matrix method. The magneto-polaron induced optical gain as a function of photon energy is observed. The results show that the optical telecommunication wavelength in the fiber optic communications can be achieved using CdSe/ZnSe semiconductors and it can be tuned with the proper applications of external perturbations.展开更多
文摘Effects of LO-phonon contribution on the electronic and the optical properties are investigated in a Cdo.sZno.2 Se/ZnSe quantum dot in the presence of magnetic field strength. The magneto-polaron induced hydro- genic binding energy as a function of dot radius in the wide band gap quantum dot is calculated. The oscilla- tor strength and the spontaneous lifetime are studied taking into account the spatial confinement, magnetic field strength and the phonon contribution. Numerical calculations are carried out using variational formulism within the single band effective mass approximation. The optical properties are computed with the compact density matrix method. The magneto-polaron induced optical gain as a function of photon energy is observed. The results show that the optical telecommunication wavelength in the fiber optic communications can be achieved using CdSe/ZnSe semiconductors and it can be tuned with the proper applications of external perturbations.
