The objective of the CERN RD50 Collaboration is to develop radiation hard semiconductor detectors for very high luminosity colliders, in particular, for the upgrade of the large hadron collider (LHC) which itself is s...The objective of the CERN RD50 Collaboration is to develop radiation hard semiconductor detectors for very high luminosity colliders, in particular, for the upgrade of the large hadron collider (LHC) which itself is scheduled to be operational in 2007. The approach of the RD50 has two major research lines, material engineering and device engineering. These are further subdivided into projects covering defect characterization and engineering, new detector materials, detector characterization, new detector structures and full detector systems. Presently, 264 members from 53 institutes are actively participating in the RD50 Collaboration. Detectors made of defect engineered substrates, e.g. high resistivity magnetic Czochralski (MCz-Si), epitaxial silicon (Epi-Si) on Czochralski silicon (Cz-Si) substrate, intentionally thermal donor (TD) compensated p-type MCz-Si and oxygen enriched (DOFZ) silicon, have been demonstrated by the RD50 Collaboration. An overview and highlights of the results of these defect engineering techniques were given in this report.展开更多
文摘The objective of the CERN RD50 Collaboration is to develop radiation hard semiconductor detectors for very high luminosity colliders, in particular, for the upgrade of the large hadron collider (LHC) which itself is scheduled to be operational in 2007. The approach of the RD50 has two major research lines, material engineering and device engineering. These are further subdivided into projects covering defect characterization and engineering, new detector materials, detector characterization, new detector structures and full detector systems. Presently, 264 members from 53 institutes are actively participating in the RD50 Collaboration. Detectors made of defect engineered substrates, e.g. high resistivity magnetic Czochralski (MCz-Si), epitaxial silicon (Epi-Si) on Czochralski silicon (Cz-Si) substrate, intentionally thermal donor (TD) compensated p-type MCz-Si and oxygen enriched (DOFZ) silicon, have been demonstrated by the RD50 Collaboration. An overview and highlights of the results of these defect engineering techniques were given in this report.
