A reuse fabrication module using micro electrochemistry (MECM) with a round-ball tool to remove the defective In2O3 SnO2 thin film from the surfaces of digital paper display was presented.The etching effect improves t...A reuse fabrication module using micro electrochemistry (MECM) with a round-ball tool to remove the defective In2O3 SnO2 thin film from the surfaces of digital paper display was presented.The etching effect improves that the number of the round-balls decreases for promoting the concentration of electric power and increasing discharge space.Using a small size of the round-ball tool takes less time for the same amount of In2O3 SnO 2 layer removal since the effect of MECM is easily developed for supplying of sufficient electrochemical power.A higher feed rate of the poly ethylene terephthalate (PET) diaphragm combines with enough electric power to drive fast etching rate.A pulsed direct current can improve the effect of dreg discharge and is advantageous to couple this current with the fast feed rate of the workpiece.Through the ultra-precise etching of In2O 3 SnO2,the optoelectronic semiconductor industry can effectively reuse the defective products,reducing production costs.This precision etching process is of high efficiency and requires only a short period of time to remove the In2O3 SnO2 nanostructures.展开更多
基金Project(100-2221-E-152-003)supported by National Science Council
文摘A reuse fabrication module using micro electrochemistry (MECM) with a round-ball tool to remove the defective In2O3 SnO2 thin film from the surfaces of digital paper display was presented.The etching effect improves that the number of the round-balls decreases for promoting the concentration of electric power and increasing discharge space.Using a small size of the round-ball tool takes less time for the same amount of In2O3 SnO 2 layer removal since the effect of MECM is easily developed for supplying of sufficient electrochemical power.A higher feed rate of the poly ethylene terephthalate (PET) diaphragm combines with enough electric power to drive fast etching rate.A pulsed direct current can improve the effect of dreg discharge and is advantageous to couple this current with the fast feed rate of the workpiece.Through the ultra-precise etching of In2O 3 SnO2,the optoelectronic semiconductor industry can effectively reuse the defective products,reducing production costs.This precision etching process is of high efficiency and requires only a short period of time to remove the In2O3 SnO2 nanostructures.
