Direct nitridation of Si(100)surface by low energy N^(+)_(2)ion beam implantation at room temperature for differention doses and angles of incidence has been investigated by in-situ Auger electron spectroscopy and gla...Direct nitridation of Si(100)surface by low energy N^(+)_(2)ion beam implantation at room temperature for differention doses and angles of incidence has been investigated by in-situ Auger electron spectroscopy and glancing Rutherford backscattering-channeling(RBS-C)measurements.The results show that with increase of N^(+)_(2)ion dose the N concentration in the Si surface increases and reaches to a surface stoichiometry close to that of Si3N4.The saturation dose and the thickness of the silicon nitride layer are related to the N^(+)_(2)ion energy.Complete nitride layer can be formed at incident angles of 0°-30°.At larger angles the degree of nitridation decreases and no nitride layer could be found at incident angles larger than 54°.The RBS-C results also suggest that a heavy damaged layer beneath the surface nitride layer can be formed due to ion beam implantation.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No.19275059the Chinese Academy of Sciences.
文摘Direct nitridation of Si(100)surface by low energy N^(+)_(2)ion beam implantation at room temperature for differention doses and angles of incidence has been investigated by in-situ Auger electron spectroscopy and glancing Rutherford backscattering-channeling(RBS-C)measurements.The results show that with increase of N^(+)_(2)ion dose the N concentration in the Si surface increases and reaches to a surface stoichiometry close to that of Si3N4.The saturation dose and the thickness of the silicon nitride layer are related to the N^(+)_(2)ion energy.Complete nitride layer can be formed at incident angles of 0°-30°.At larger angles the degree of nitridation decreases and no nitride layer could be found at incident angles larger than 54°.The RBS-C results also suggest that a heavy damaged layer beneath the surface nitride layer can be formed due to ion beam implantation.
