The sensing performances of multiple networked Ga N nanowire(NW) sensor codecorated with Au and Pt nanoparticles were examined. The pristine Ga N nanowires show responses of approximately 108%-173% to 0.05%-0.25% H2 a...The sensing performances of multiple networked Ga N nanowire(NW) sensor codecorated with Au and Pt nanoparticles were examined. The pristine Ga N nanowires show responses of approximately 108%-173% to 0.05%-0.25% H2 at room temperature. On the other hand, the Ga N nanowires decorated with Au and those decorated with Pt lead to 1.1-1.3 and 1.2-1.6 times,respectively, stronger responses to 0.05%-0.25% H2. In contrast, the Au Pt-codecorated Ga N nanowires show 1.3-2.0 times stronger responses to 0.05%-0.25% H2. In other words, the Ga N nanorods codecorated with Au and Pt nanoparticles show much stronger response to H2 gas than the Au or Pt monometal-decorated counterpart. The underlying mechanism for the enhanced response of the Au Pt-codecorated Ga N nanowire was discussed.展开更多
Nitrogen-doped, p-type ZnO thin films were grown successfully on sapphire (0001) substrates by using atomic layer epitaxy (ALE). Zn(C2H5)2 [Diethylzinc, DEZn], H2O and NH3 were used as a zinc precursor, an oxidant and...Nitrogen-doped, p-type ZnO thin films were grown successfully on sapphire (0001) substrates by using atomic layer epitaxy (ALE). Zn(C2H5)2 [Diethylzinc, DEZn], H2O and NH3 were used as a zinc precursor, an oxidant and a doping source gas, respectively. The lowest electrical resistivity of the p-type ZnO films grown by ALE and annealed at 1000 ℃ in an oxygen atmosphere for 1 h was 18.3 Ω·cm with a hole concentration of 3.71×1017 cm-3. Low temperature-photoluminescence analysis and time-dependent Hall measurement results support that the nitrogen-doped ZnO after annealing is a p-type semiconductor.展开更多
基金Project(2010-0020163)supported by Basic Science Research Program through the National Research Foundation(NRF)funded by the Ministry of Education of Korea
文摘The sensing performances of multiple networked Ga N nanowire(NW) sensor codecorated with Au and Pt nanoparticles were examined. The pristine Ga N nanowires show responses of approximately 108%-173% to 0.05%-0.25% H2 at room temperature. On the other hand, the Ga N nanowires decorated with Au and those decorated with Pt lead to 1.1-1.3 and 1.2-1.6 times,respectively, stronger responses to 0.05%-0.25% H2. In contrast, the Au Pt-codecorated Ga N nanowires show 1.3-2.0 times stronger responses to 0.05%-0.25% H2. In other words, the Ga N nanorods codecorated with Au and Pt nanoparticles show much stronger response to H2 gas than the Au or Pt monometal-decorated counterpart. The underlying mechanism for the enhanced response of the Au Pt-codecorated Ga N nanowire was discussed.
文摘Nitrogen-doped, p-type ZnO thin films were grown successfully on sapphire (0001) substrates by using atomic layer epitaxy (ALE). Zn(C2H5)2 [Diethylzinc, DEZn], H2O and NH3 were used as a zinc precursor, an oxidant and a doping source gas, respectively. The lowest electrical resistivity of the p-type ZnO films grown by ALE and annealed at 1000 ℃ in an oxygen atmosphere for 1 h was 18.3 Ω·cm with a hole concentration of 3.71×1017 cm-3. Low temperature-photoluminescence analysis and time-dependent Hall measurement results support that the nitrogen-doped ZnO after annealing is a p-type semiconductor.
