Optimizing piezoelectric performance of complex perovskite through increasing diversity of B-site cations

Piezoelectric materials with unique properties are hugely appealing for high sensitivity sensors and ultrasonic transducers.Here,Pb(Ni_(1/3)Nb_(2/3))O_(3)-Pb(Yb_(1/2)Nb_(1/2))O_(3)-PbTiO_(3)piezoelectric system was designed and investigated in detail.The optimized piezoelectric response(d_(33)=826 pC/N,d_(33)∗=1017 pm/V)together with good temperature stability and negligible performance degradation up to 10^(6) cycles was achieved in 0.58PNN-0.10PYN-0.32PT composition.Rayleigh analysis revealed the amplification of intrinsic and extrinsic contributions in MPB region due to more spontaneous polarization orientations and an increase in chemical disorder of system after the introduction of PYN.The origin of high piezoelectric response was investigated through the combination of scanning electron microscopy and piezoresponse force microscopy.The diversity of B-site cations was shown to enhance local structural heterogeneity,weaken long-range ferroelectric ordered domains,and lower free energy barrier via the formation of nanodomain configuration that promoted polarization rotation,thereby improving piezoelectric properties of the material.Therefore,it is suggested that increasing the diversity of B-site cations is an effective strategy for achieving outstanding piezoelectric performance.

GaN metal-oxide-semiconductor field-effect transistors on AIGaN/GaN heterostructure with recessed gate

GaN metal-oxide-semiconductor field-effect transistors （MOSFETs） on AIGaN/GaN heterostructure with a recess gate were fabricated and characterized. The device showed good pinch-off characteristics and a maximum field-effect mobility of 145.2 cm2.V-1.s-1. The effects of etching gas of CI2 and SiCI4 were investigated in the gate recess process. SiCI4-etched devices showed higher channel mobility and lower threshold voltage. Atomic force microscope measurement was done to investigate the etching profile with different etching protection mask. Compared with photoresist, SiO2- masked sample showed lower surface roughness and better profile with stepper sidewall and weaker trenching effect resulting in higher channel mobility in the MOSFET.