Electron push-pull effects induced performance promotion in covalent organic polymer thin films-based memristor for neuromorphic application

Covalent organic polymer(COP)thin film-based memristors have generated intensive research interest,but the studies are still in their infancy.Herein,by controlling the content of hydroxyl groups in the aldehyde monomer,Py-COP thin films with different electronic push-pull effects were fabricated bearing distinct memory performances,where the films were prepared by the solid-liquid interface method on the ITO substrates and further fabricated as memory devices with ITO/Py-COPs/Ag architectures.The Py-COP-1-based memory device only exhibited binary memory behavior with an ON/OFF ratio of 1:10^(1.87).In contrast,the device based on Py-COP-2 demonstrated ternary memory behavior with an ON/OFF ratio of 1:10^(0.6):10^(3.1) and a ternary yield of 55%.The ternary memory mechanism of the ITO/Py-COP-2/Ag memory device is most likely due to the combination of the trapping of charge carriers and conductive filaments.Interestingly,the Py-COPs-based devices can successfully emulate the synaptic potentiation/depression behavior,clarifying the programmability of these devices in neuromorphic systems.These results suggest that the electronic properties of COPs can be precisely tuned at the molecular level,which provides a promising route for designing multi-level memory devices.

The visible light-triggered nonvolatile memory performances in melamine-decorated <110>-oriented lead halide perovskites: A photo-responsive structural evolution insight

The exploration of novel photo/thermal-responsive nonvolatile memorizers will be beneficial for energysaving memories.Herein,new<110>-oriented perovskites using single template melamine,i.e.,[(MLAI-H_(2))(PbX_(4))]_n(X=Br (α-1),Cl (α-2),MLAI=melamine) have been prepared and their structures upon irradiation of visible light have been investigated.They have been fabricated as nonvolatile memory devices with structures of ITO/[(MLAI-H_(2))(PbX_(4))]_n/PMMA/Ag (device-1:X=Br,device-2:X=Cl),which can exhibit unique visible light-triggered binary nonvolatile memory performances.Interestingly,the silent or working status can be monitored by visible chromisms.Furthermore,the light-triggered binary resistive switching mechanisms of these ITO/[(MLAI-H_(2))(PbX_(4))]_n/PMMA/Ag memory devices have been clarified in terms of EPR,fluorescence,and single-crystal structural analysis.The presence of light-activated traps in<110>-oriented[(MLAI-H_(2))(PbX_(4))]_n perovskites are dominated in the appearance of light-triggered resistive switching behaviors,based on which the inverted internal electrical fields can be established.According to the structural analysis,the more distorted PbX_6octahedra,higher corrugated<110>-oriented perovskite sheets,and more condensed organic-inorganic packing in Br-containing perovskite are beneficial for the stabilization of light-activated traps,which lead to the better resistive switching behavior of device-1.This work can pave a new avenue for the establishment of novel energy-saving nonvolatile memorizers used in aerospace or military industries.