Growth of single-crystal Sn O_2 nanowires using a fluorine-doped Sn O_2(FTO) thin film as both the source and substrate is demonstrated for the first time at relatively low temperature(580 °C) which preserves the...Growth of single-crystal Sn O_2 nanowires using a fluorine-doped Sn O_2(FTO) thin film as both the source and substrate is demonstrated for the first time at relatively low temperature(580 °C) which preserves the integrity of the underlying glass support and improves scalability to devices. Furthermore, a microwave hydrothermal process is shown to grow Ti O_2 nanorods on these nanowires to create a hierarchical nanoheterostructure that will lead to efficient photogenerated charge carrier separation and rapid transport of electrons to the substrate. This process simplifies nanowire growth by using commercially available and widely used FTO substrates without the need for an additional upstream Sn source and can be used as a high surface area host structure to many other hierarchical structures.展开更多
基金funded by a NASA Space Technology Research Fellowshipa Facilities Grant from the Institute for Materials Research(IMR)at The Ohio State University
文摘Growth of single-crystal Sn O_2 nanowires using a fluorine-doped Sn O_2(FTO) thin film as both the source and substrate is demonstrated for the first time at relatively low temperature(580 °C) which preserves the integrity of the underlying glass support and improves scalability to devices. Furthermore, a microwave hydrothermal process is shown to grow Ti O_2 nanorods on these nanowires to create a hierarchical nanoheterostructure that will lead to efficient photogenerated charge carrier separation and rapid transport of electrons to the substrate. This process simplifies nanowire growth by using commercially available and widely used FTO substrates without the need for an additional upstream Sn source and can be used as a high surface area host structure to many other hierarchical structures.
