In the last decade,two-dimensional layered materials(2DLMs)have been drawing extensive attentions due to their unique properties,such as absence of surface dangling bonds,thickness-dependent bandgap,high absorption co...In the last decade,two-dimensional layered materials(2DLMs)have been drawing extensive attentions due to their unique properties,such as absence of surface dangling bonds,thickness-dependent bandgap,high absorption coeffi-cient,large specific surface area,and so on.But the high-quality growth and transfer of wafer-scale 2DLMs films is still a great challenge for the commerciali-zation of pure 2DLMs-based photodetectors.Conversely,the material growth and device fabrication technologies of three-dimensional(3D)semiconductors photodetectors tend to be gradually matured.However,the further improvement of the photodetection performance is limited by the difficult heterogeneous inte-gration or the inferior crystal quality via heteroepitaxy.Fortunately,2D/3D van der Waals heterostructures(vdWH)combine the advantages of the two types of materials simultaneously,which may provide a new platform for developing high-performance optoelectronic devices.Here,we first discuss the unique advantages of 2D/3D vdWH for the future development of photodetection field and simply introduce the structure categories,working mechanisms,and the typical fabrication methods of 2D/3D vdWH photodetector.Then,we outline the recent progress on 2D/3D vdWH-based photodetection devices integrating 2DLMs with the traditional 3D semiconductor materials,including Si,Ge,GaAs,AlGaN,SiC,and so on.Finally,we highlight the current challenges and pros-pects of heterointegrating 2DLMs with traditional 3D semiconductors toward photodetection applications.展开更多
本文报道了一种快速、可控合成单层MoS_(2)纳米-微米带的方法:通过在蓝宝石衬底上旋涂Na_(2)MoO_(4)和NaOH的混合溶液后一步化学气相沉积硫化的方式进行生长.其中,通过改变NaOH的浓度,对气-液-固生长过程中的反应物液滴流动性进行调控,...本文报道了一种快速、可控合成单层MoS_(2)纳米-微米带的方法:通过在蓝宝石衬底上旋涂Na_(2)MoO_(4)和NaOH的混合溶液后一步化学气相沉积硫化的方式进行生长.其中,通过改变NaOH的浓度,对气-液-固生长过程中的反应物液滴流动性进行调控,我们实现了对所获得的MoS_(2)的形貌和取向的调控;同时,通过改变生长时间,可以实现对MoS_(2)层数的调控.利用这种方法,我们获得了最窄宽度仅为200 nm,纵横比超过100的单层MoS_(2)纳米-微米带,且表征证明其具有很高的晶体质量.同时,我们还用该MoS_(2)纳米带作为沟道材料,制备了光电晶体管,测试表明其具有高达9×10^(5)的电流开/关比、超过10^(5)的光暗电流比以及高达8.6 A W^(-1)的响应度,展现了其在电子和光电子器件中的应用潜力.展开更多
基金Funding information National Natural Science Foundation of China,Grant/Award Numbers:61974174,61904184,62174061,62174063National Key Research and Development Program of China,Grant/Award Number:2022YFB3605104+3 种基金Key Research and Development Program of Hubei Province,Grant/Award Number:2021BAA071Key Laboratory of Infrared Imaging Materials and Detectors,the Shanghai Institute of Technical Physics,the Chinese Academy of Sciences,Grant/Award Number:IIMDKFJJ-21-07Fundamental Research Funds for the Central Universities,Grant/Award Number.2020kfyXJJS124Director Fund of WNLO。
文摘In the last decade,two-dimensional layered materials(2DLMs)have been drawing extensive attentions due to their unique properties,such as absence of surface dangling bonds,thickness-dependent bandgap,high absorption coeffi-cient,large specific surface area,and so on.But the high-quality growth and transfer of wafer-scale 2DLMs films is still a great challenge for the commerciali-zation of pure 2DLMs-based photodetectors.Conversely,the material growth and device fabrication technologies of three-dimensional(3D)semiconductors photodetectors tend to be gradually matured.However,the further improvement of the photodetection performance is limited by the difficult heterogeneous inte-gration or the inferior crystal quality via heteroepitaxy.Fortunately,2D/3D van der Waals heterostructures(vdWH)combine the advantages of the two types of materials simultaneously,which may provide a new platform for developing high-performance optoelectronic devices.Here,we first discuss the unique advantages of 2D/3D vdWH for the future development of photodetection field and simply introduce the structure categories,working mechanisms,and the typical fabrication methods of 2D/3D vdWH photodetector.Then,we outline the recent progress on 2D/3D vdWH-based photodetection devices integrating 2DLMs with the traditional 3D semiconductor materials,including Si,Ge,GaAs,AlGaN,SiC,and so on.Finally,we highlight the current challenges and pros-pects of heterointegrating 2DLMs with traditional 3D semiconductors toward photodetection applications.
基金supported by the National Natural Science Foundation of China(62174063,62174061,and 61974174)the National Key Research and Development Program of China(2022YFB3605104)+3 种基金the Key Research and Development Program of Hubei Province(2021BAA071)the Natural Science Foundation of Hubei Province(2022CFB011)the Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences(IIMDKFJJ-21-07)the Fundamental Research Funds for the Central Universities(2020kfyXJJS124)。
文摘本文报道了一种快速、可控合成单层MoS_(2)纳米-微米带的方法:通过在蓝宝石衬底上旋涂Na_(2)MoO_(4)和NaOH的混合溶液后一步化学气相沉积硫化的方式进行生长.其中,通过改变NaOH的浓度,对气-液-固生长过程中的反应物液滴流动性进行调控,我们实现了对所获得的MoS_(2)的形貌和取向的调控;同时,通过改变生长时间,可以实现对MoS_(2)层数的调控.利用这种方法,我们获得了最窄宽度仅为200 nm,纵横比超过100的单层MoS_(2)纳米-微米带,且表征证明其具有很高的晶体质量.同时,我们还用该MoS_(2)纳米带作为沟道材料,制备了光电晶体管,测试表明其具有高达9×10^(5)的电流开/关比、超过10^(5)的光暗电流比以及高达8.6 A W^(-1)的响应度,展现了其在电子和光电子器件中的应用潜力.
