IPsec has become an important supplement of IP to provide security protection. However, the heavyweight IPsec has a high transmission overhead and latency, and it cannot provide the address accountability. We propose ...IPsec has become an important supplement of IP to provide security protection. However, the heavyweight IPsec has a high transmission overhead and latency, and it cannot provide the address accountability. We propose the self-trustworthy and secure Internet protocol(T-IP) for authenticated and encrypted network layer communications. T-IP has the following advantages:(1) Self-Trustworthy IP address.(2) Low connection latency and transmission overhead.(3) Reserving the important merit of IP to be stateless.(4) Compatible with the existing TCP/IP architecture. We theoretically prove the security of our shared secret key in T-IP and the resistance to the known session key attack of our security-enhanced shared secret key calculation. Moreover, we analyse the possibility of the application of T-IP, including its resilience against the man-in-the-middle attack and Do S attack. The evaluation shows that T-IP has a much lower transmission overhead and connection latency compared with IPsec.展开更多
Sb-doped β-Ga_(2)O_(3) crystals were grown using the optical floating zone(OFZ) method.X-ray diffraction data and X-ray rocking curves were obtained,and the results revealed that the Sb-doped single crystals were of ...Sb-doped β-Ga_(2)O_(3) crystals were grown using the optical floating zone(OFZ) method.X-ray diffraction data and X-ray rocking curves were obtained,and the results revealed that the Sb-doped single crystals were of high quality.Raman spectra revealed that Sb substituted Ga mainly in the octahedral lattice.The carrier concentration of the Sb-doped single crystals increased from 9.55 × 10^(16) to 8.10 × 10^(18) cm^(-3),the electronic mobility depicted a decreasing trend from 153.1 to108.7 cm~2·V^(-1)·s^(-1),and the electrical resistivity varied from 0.603 to 0.017 Ω·cm with the increasing Sb doping concentration.The un-doped and Sb-doped β-Ga_(2)O_(3) crystals exhibited good light transmittance in the visible region;however,the evident decrease in the infrared region was caused by increase in the carrier concentration.The Sb-doped β-Ga_(2)O_(3) single crystals had high transmittance in the UV region as well,and the cutoff edge appeared at 258 nm.展开更多
基金supported by the national key research and development program under grant 2017YFB0802301Guangxi cloud computing and large data Collaborative Innovation Center Project
文摘IPsec has become an important supplement of IP to provide security protection. However, the heavyweight IPsec has a high transmission overhead and latency, and it cannot provide the address accountability. We propose the self-trustworthy and secure Internet protocol(T-IP) for authenticated and encrypted network layer communications. T-IP has the following advantages:(1) Self-Trustworthy IP address.(2) Low connection latency and transmission overhead.(3) Reserving the important merit of IP to be stateless.(4) Compatible with the existing TCP/IP architecture. We theoretically prove the security of our shared secret key in T-IP and the resistance to the known session key attack of our security-enhanced shared secret key calculation. Moreover, we analyse the possibility of the application of T-IP, including its resilience against the man-in-the-middle attack and Do S attack. The evaluation shows that T-IP has a much lower transmission overhead and connection latency compared with IPsec.
基金supported by the National Natural Science Foundation of China(NSFC)(Nos.51972319,52002386,and 52072183)the Science and Technology Commission of Shanghai Municipality(No.19520744400)the Shanghai Science and Technology Commission(No.20511107400)。
文摘Sb-doped β-Ga_(2)O_(3) crystals were grown using the optical floating zone(OFZ) method.X-ray diffraction data and X-ray rocking curves were obtained,and the results revealed that the Sb-doped single crystals were of high quality.Raman spectra revealed that Sb substituted Ga mainly in the octahedral lattice.The carrier concentration of the Sb-doped single crystals increased from 9.55 × 10^(16) to 8.10 × 10^(18) cm^(-3),the electronic mobility depicted a decreasing trend from 153.1 to108.7 cm~2·V^(-1)·s^(-1),and the electrical resistivity varied from 0.603 to 0.017 Ω·cm with the increasing Sb doping concentration.The un-doped and Sb-doped β-Ga_(2)O_(3) crystals exhibited good light transmittance in the visible region;however,the evident decrease in the infrared region was caused by increase in the carrier concentration.The Sb-doped β-Ga_(2)O_(3) single crystals had high transmittance in the UV region as well,and the cutoff edge appeared at 258 nm.
