Constructing highly dispersed 0D Co3S4 quantum dots/2D g-C3N4 nanosheets nanocomposites for excellent photocatalytic performance

The development of noble-metal-free catalysts with high efficiency photocatalytic properties is critical to the heterogeneous catalysis. Herein, zero-dimensional(0 D) metal sulfide quantum dots/two-dimensional(2 D) g-C3N4 nanosheets(Co3S4/CNNS) nanocomposites are synthesized by a two-step method, including the ways of in-situ deposition and water bath. The highly dispersed Co3S4 quantum dots(particle size is2–4 nm) are evenly and tightly fixed on CNNS, which can be used as co-catalyst to effectively replace noble metals to improve the photocatalytic properties of CNNS. Co3S4/CNNS-900 has the apparent quantum efficiency, which is up to 7.85% at 400 nm. At the same time, the H2 evolution rate of Co3S4/CNNS-900 is 20,536.4 lmol gà1 hà1, which is 555 times than CNNS. The excellent photocatalytic performance is due to the highly dispersed Co3S4 quantum dots on 2 D CNNS, which facilitate the formation of more active sites, Co3S4/CNNS promotes the separation and migration of photogenerated carriers, shortens the migration distance of photogenerated carriers, and eventually leads to an increase of the photocatalytic performance.

Nickel/cobalt based materials for supercapacitors

The electrode materials as the key component of supercapacitors have attracted considerable research interests, especially for nickel/cobalt based materials by virtue of their superior electrochemical performance with multiple oxidation states for richer redox reactions, abundant natural resources, lower prices and toxicity. There are many advanced electrodes based on the nickel/cobalt materials exploited for the application of supercapacitors, however, some controversial statements have induced some confusion. Herein, we refine the mechanism of energy storage for the nickel/cobalt based materials for supercapacitors and reclassify them into battery-type materials with the corresponding devices named as hybrid supercapacitors.

An overview of the switching parameter variation of RRAM

Resistive random access memory(RRAM) has been considered as one of the most promising candidates for next-generation nonvolatile memory, due to its advantages of simple device structure, excellent scalability, fast operation speed and low power consumption. Deeply understanding the physical mechanism and effectively controlling the statistical variation of switching parameters are the basis of fostering RRAM into commercial application. In this paper, based on the deep understanding on the mechanism of the formation and rupture of conductive filament, we summarize the methods of analyzing and modeling the statistics of switching parameters such as SET/RESET voltage, current, speed or time. Then, we analyze the distributions of switching parameters and the influencing factors. Additionally, we also sum up the analytical model of resistive switching statistics composed of the cell-based percolation model and SET/RESET switching dynamics. The results of the model can successfully explain the experimental distributions of switching parameters of the Ni O- and Hf O2-based RRAM devices. The model also provides theoretical guide on how to improve the uniformity and reliability such as disturb immunity. Finally, some experimental approaches to improve the uniformity of switching parameters are discussed.