Visible-to-near-infrared photodetectors based on SnS/SnSe_(2)and SnSe/SnSe_(2)p−n heterostructures with a fast response speed and high normalized detectivity

The emergent two-dimensional(2D)material,tin diselenide(SnSe_(2)),has garnered significant consideration for its potential in image capturing systems,optical communication,and optoelectronic memory.Nevertheless,SnSe_(2)-based photodetection faces obstacles,including slow response speed and low normalized detectivity.In this work,photodetectors based on SnS/SnSe_(2)and SnSe/SnSe_(2)p−n heterostructures have been implemented through a polydimethylsiloxane(PDMS)−assisted transfer method.These photodetectors demonstrate broad-spectrum photoresponse within the 405 to 850 nm wavelength range.The photodetector based on the SnS/SnSe_(2)heterostructure exhibits a significant responsivity of 4.99×10^(3)A∙W^(−1),normalized detectivity of 5.80×10^(12)cm∙Hz^(1/2)∙W^(−1),and fast response time of 3.13 ms,respectively,owing to the built-in electric field.Meanwhile,the highest values of responsivity,normalized detectivity,and response time for the photodetector based on the SnSe/SnSe_(2)heterostructure are 5.91×10^(3)A∙W^(−1),7.03×10^(12)cm∙Hz^(1/2)∙W−1,and 4.74 ms,respectively.And their photodetection performances transcend those of photodetectors based on individual SnSe_(2),SnS,SnSe,and other commonly used 2D materials.Our work has demonstrated an effective strategy to improve the performance of SnSe_(2)-based photodetectors and paves the way for their future commercialization.

生物大分子的量子计算模拟:并行量子算法的初步探索

Quantum computing is a rapidly-emerging technology that is widely expected to solve valuable problems in physics and chemistry.After quantum computational advantage in the task of sampling has been demonstrated on both photonic and superconductor quantum platforms[1,2],quantum computing is urgently seeking to solve problems of practical interest that are often intractable or at least computationally demanding for classical computers[3].

Optical properties of Nd^(3+) ions doped GdTaO_(4) for pressure and temperature sensing

Pressure-and temperature-dependent luminescence properties of ^(3)F_(3/2)→^(4)I9/2 transition of Nd^(3+):GdTaO_(4) were studied for potential applications in optical sensing.Two isolated emission lines corresponding to^(3)F_(3/2)(R2,1)→^(4)I_(9/2)(Z5)transitions,located at 920 and 927 nm under ambient condition,are very sensitive to pressure with coefficients of-15.6 and-14.5 cm^(-1)/GPa determined in a pressure range up to about 9 GPa.The luminescence intensity ratio between the two emission lines exhibits a large dependence with temperature in a range from 80 to 620 K,the corresponding temperature sensitivity at room temperature is similar to that of Nd^(3+):YAG.These advantages,together with the other observed features of high stable position relationship under pressure and low thermal shifts for the two emission lines indicate that Nd^(3+):GdTaO_(4) is a promising candidate to be used as pressure and temperature sensors in the near-infrared spectral range.