We developed a new single-layer atom chip with an additional U-shaped current-carrying structure.The new U-shaped microwire creates optimized magnetic field distribution,which increases the trapping volume of a magnet...We developed a new single-layer atom chip with an additional U-shaped current-carrying structure.The new U-shaped microwire creates optimized magnetic field distribution,which increases the trapping volume of a magneto-optical trap(MOT) near the chip.Our approach allows one to localize more atoms,while a setup remains relatively simple (single-layer approach) and consumes low current (up to 10 A). The total number of trapped^(87)Rb atoms in our setup is 5×10^(7).展开更多
基金supported by the Russian Science Foundation (No.23-22-00255)。
文摘We developed a new single-layer atom chip with an additional U-shaped current-carrying structure.The new U-shaped microwire creates optimized magnetic field distribution,which increases the trapping volume of a magneto-optical trap(MOT) near the chip.Our approach allows one to localize more atoms,while a setup remains relatively simple (single-layer approach) and consumes low current (up to 10 A). The total number of trapped^(87)Rb atoms in our setup is 5×10^(7).
