We report on the unconventional optical properties exhibited by a two-dimensional array of thin Si nanowires arranged in a random fractal geometry and fabricated using an inexpensive,fast and maskless process compatib...We report on the unconventional optical properties exhibited by a two-dimensional array of thin Si nanowires arranged in a random fractal geometry and fabricated using an inexpensive,fast and maskless process compatible with Si technology.The structure allows for a high light-trapping efficiency across the entire visible range,attaining total reflectance values as low as 0.1%when the wavelength in the medium matches the length scale of maximum heterogeneity in the system.We show that the random fractal structure of our nanowire array is responsible for a strong in-plane multiple scattering,which is related to the material refractive index fluctuations and leads to a greatly enhanced Raman scattering and a bright photoluminescence.These strong emissions are correlated on all length scales according to the refractive index fluctuations.The relevance and the perspectives of the reported results are discussed as promising for Si-based photovoltaic and photonic applications.展开更多
文摘We report on the unconventional optical properties exhibited by a two-dimensional array of thin Si nanowires arranged in a random fractal geometry and fabricated using an inexpensive,fast and maskless process compatible with Si technology.The structure allows for a high light-trapping efficiency across the entire visible range,attaining total reflectance values as low as 0.1%when the wavelength in the medium matches the length scale of maximum heterogeneity in the system.We show that the random fractal structure of our nanowire array is responsible for a strong in-plane multiple scattering,which is related to the material refractive index fluctuations and leads to a greatly enhanced Raman scattering and a bright photoluminescence.These strong emissions are correlated on all length scales according to the refractive index fluctuations.The relevance and the perspectives of the reported results are discussed as promising for Si-based photovoltaic and photonic applications.
