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Growth of Fe-Doped and V-Doped MoS2 and Their Magnetic-Electrical Effects
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作者 Rui Tao Zhi-Hao Yang +7 位作者 Chao Tan Xin Hao Zun-Gui Ke Lei Yang li-Ping Dai Xin-Wu Deng ping-jian li Ze-Gao Wang 《Journal of Electronic Science and Technology》 CAS CSCD 2022年第3期225-236,共12页
Magnetism in two-dimensional(2D)materials has attracted much attention recently.However,intrinsic magnetic 2D materials are rare and mostly unstable in ambient.Although heteroatom doping can introduce magnetism,the ba... Magnetism in two-dimensional(2D)materials has attracted much attention recently.However,intrinsic magnetic 2D materials are rare and mostly unstable in ambient.Although heteroatom doping can introduce magnetism,the basic property especially the electrical-magnetic coupling property has been rarely revealed.Herein,both iron(Fe)-doped and vanadium(V)-doped MoSfilms were grown by chemical vapor deposition.Through studying the structure and electrical property of Fe-doped and V-doped MoS,it was found that both Fe and V doping would decrease the electron concentration,exhibiting a p-type doping effect.Significantly,V-doped MoSdisplays a p-type conduction behavior.Although the carrier mobility decreases after heteroatom doping,both Fe and V doping could endow MoSwith magnetism,in which the transfer curves of both MoStransistors exhibit a strong magneticdependent behavior.It is found that the magnetic response of Fe-doped MoScan be tuned from~0.2 nA/T to~1.3 nA/T,with the tunability much larger than that of V-doped MoS.At last,the magnetic mechanism is discussed with the local magnetic property performed by magnetic force microscopy.The typical morphology-independent magnetic signal demonstrates the formed magnetic domain structure in Fe-doped MoS.This study opens new potential to design novel magnetic-electrical devices. 展开更多
关键词 Magnetic domain magnetic doping MOS2 p-type semiconductor
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