Semiconductor GaAs microcrystallites were embedded in SiO_(2) thin films by magnetron rf cosputtering technique.Structures of the thin films were characterized by transmission electron microscopy,x-ray diffraction and...Semiconductor GaAs microcrystallites were embedded in SiO_(2) thin films by magnetron rf cosputtering technique.Structures of the thin films were characterized by transmission electron microscopy,x-ray diffraction and x-ray photoelectron microscopy.Average size of microcrystallites,depending on the substrate temperature during deposition,is 3-10nm.Absorption spectra of the films were measured.Blue shift of absorption edge was observed and discussed according to quantum confinement effect.展开更多
文摘Semiconductor GaAs microcrystallites were embedded in SiO_(2) thin films by magnetron rf cosputtering technique.Structures of the thin films were characterized by transmission electron microscopy,x-ray diffraction and x-ray photoelectron microscopy.Average size of microcrystallites,depending on the substrate temperature during deposition,is 3-10nm.Absorption spectra of the films were measured.Blue shift of absorption edge was observed and discussed according to quantum confinement effect.
