目的比较不同神经肌肉阻滞程度下的运动诱发电位(motor evoked potential,MEP)变化以及在术中的适用性。方法MEP监测下的180例接受神经外科幕下肿瘤或动脉瘤手术患者,被随机分为A、B、C组,每组60例。A组术中保持四个成串刺激(train of f...目的比较不同神经肌肉阻滞程度下的运动诱发电位(motor evoked potential,MEP)变化以及在术中的适用性。方法MEP监测下的180例接受神经外科幕下肿瘤或动脉瘤手术患者,被随机分为A、B、C组,每组60例。A组术中保持四个成串刺激(train of four,TOF)计数为2,B组术中TOF计数为4,但同时需保持T1/Tc比值为0.5,C组为术中无肌松组。记录术中监测MEP的波幅变化,MEP对手术监测的有效性以及患者术中体动、自主呼吸恢复和血流动力学稳定性的影响。结果神经肌肉阻滞药物显著降低MEP的波幅。无肌松组患者MEP波幅无明显变化,术中体动、自主呼吸恢复事件、手术时间较其他组无明显增加(P>0.05)。3组的手术时间、患者的基本特征以及血流动力学参数、术中药物的剂量、术中不良反应差异均无统计学意义(P>0.05)。结论在需要MEP监测的手术患者中,在MEP监测时若使用NMB,则建议将目标设为术中TOF计数为4,但同时需保持T1/Tc比值为0.5。在MEP振幅变化方面,不使用NMB会提供更好的MEP波形以及监测效果。展开更多
Room-temperature negative differential resistance(NDR)characteristics are observed in a nanocrystalline Si quantum dot(nc-Si QD)floating-gate MOS structure,which is fabricated by plasma-enhanced chemical vapor deposit...Room-temperature negative differential resistance(NDR)characteristics are observed in a nanocrystalline Si quantum dot(nc-Si QD)floating-gate MOS structure,which is fabricated by plasma-enhanced chemical vapor deposition.Clear multi-NDR peaks for the electrons and holes,shown in the I–V curves,which are significant for the application of multiple value memory and logic,are proved to be induced by electron and hole resonant tunneling into the nc-Si QDs from the substrate.The calculation results indicate that these NDR characteristics should be associated with the Coulomb blockade effect and the quantum confinement effect of the nc-Si QDs.Furthermore,low-temperature I–V characteristics are also investigated to confirm the room-temperature results.展开更多
文摘目的比较不同神经肌肉阻滞程度下的运动诱发电位(motor evoked potential,MEP)变化以及在术中的适用性。方法MEP监测下的180例接受神经外科幕下肿瘤或动脉瘤手术患者,被随机分为A、B、C组,每组60例。A组术中保持四个成串刺激(train of four,TOF)计数为2,B组术中TOF计数为4,但同时需保持T1/Tc比值为0.5,C组为术中无肌松组。记录术中监测MEP的波幅变化,MEP对手术监测的有效性以及患者术中体动、自主呼吸恢复和血流动力学稳定性的影响。结果神经肌肉阻滞药物显著降低MEP的波幅。无肌松组患者MEP波幅无明显变化,术中体动、自主呼吸恢复事件、手术时间较其他组无明显增加(P>0.05)。3组的手术时间、患者的基本特征以及血流动力学参数、术中药物的剂量、术中不良反应差异均无统计学意义(P>0.05)。结论在需要MEP监测的手术患者中,在MEP监测时若使用NMB,则建议将目标设为术中TOF计数为4,但同时需保持T1/Tc比值为0.5。在MEP振幅变化方面,不使用NMB会提供更好的MEP波形以及监测效果。
基金Supported by the National Basic Research Program of China under Grant No 2010CB934402.
文摘Room-temperature negative differential resistance(NDR)characteristics are observed in a nanocrystalline Si quantum dot(nc-Si QD)floating-gate MOS structure,which is fabricated by plasma-enhanced chemical vapor deposition.Clear multi-NDR peaks for the electrons and holes,shown in the I–V curves,which are significant for the application of multiple value memory and logic,are proved to be induced by electron and hole resonant tunneling into the nc-Si QDs from the substrate.The calculation results indicate that these NDR characteristics should be associated with the Coulomb blockade effect and the quantum confinement effect of the nc-Si QDs.Furthermore,low-temperature I–V characteristics are also investigated to confirm the room-temperature results.
