ZnO thin films were deposited on graphite substrates by ultrasonic spray pyrolysis method with Zn（CH3COO）2·2H2O aqueous solution as precursor. The crystalline structure, morphology, and optical properties of th...ZnO thin films were deposited on graphite substrates by ultrasonic spray pyrolysis method with Zn（CH3COO）2·2H2O aqueous solution as precursor. The crystalline structure, morphology, and optical properties of the as-grown ZnO films were investigated systematically as a function of deposition temperature and growth time. Near-band edge ultraviolet （UV） emission was observed in room temperature photoluminescence spectra for the optimized samples, yet the usually observed defect related deep level emissions were nearly undetectable, indicating that high optical quality ZnO thin films could be achieved via this ultrasonic spray pyrolysis method. Considering the features of transferable and low thermal resistance of the graphite substrates, the achievement will be of special interest for the development of high-power semiconductor devices with sufficient vower durability.展开更多
Highly c-axis-oriented GaN films were deposited on Ti coated glass substrates using low temperature electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition system(ECR-PEMOCVD)with trimethy...Highly c-axis-oriented GaN films were deposited on Ti coated glass substrates using low temperature electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition system(ECR-PEMOCVD)with trimethyl gallium(TMGa)as gallium source.The influence of TMGa flux on the properties of GaN films were systematically investigated by reflection high energy electron diffraction(RHEED),X-ray diffraction analysis(XRD),atomic force microscopy(AFM)and Raman scattering.The GaN film with small surface roughness and high c-axis preferred orientation was successfully achieved at the optimized TMGa flux of 1.0 sccm.The ohmic contact characteristic between GaN and Ti layer was clearly demonstrated by the near-linear current-voltage(I-V)curve.The GaN/Ti/glass structure has great potential to dramatically improve the scalability and reduce the cost of solid-state lighting light emitting diodes.展开更多
基金Funded by the Fundamental Research Funds for the Central Universities(No.DUT12ZD(G)01)the Opening Project of Key Laboratory of Inorganic Coating Materials,Chinese Academy of Sciences(No.KLICM-2012-01)
文摘ZnO thin films were deposited on graphite substrates by ultrasonic spray pyrolysis method with Zn（CH3COO）2·2H2O aqueous solution as precursor. The crystalline structure, morphology, and optical properties of the as-grown ZnO films were investigated systematically as a function of deposition temperature and growth time. Near-band edge ultraviolet （UV） emission was observed in room temperature photoluminescence spectra for the optimized samples, yet the usually observed defect related deep level emissions were nearly undetectable, indicating that high optical quality ZnO thin films could be achieved via this ultrasonic spray pyrolysis method. Considering the features of transferable and low thermal resistance of the graphite substrates, the achievement will be of special interest for the development of high-power semiconductor devices with sufficient vower durability.
基金supported by the Opening Project of Key Laboratory of Inorganic Coating Materials,Chinese Academy of Sciences(KLICM2012-01)the Fundamental Research Funds for the Central Universities(DUT13LK02,DUT13JN08)
文摘Highly c-axis-oriented GaN films were deposited on Ti coated glass substrates using low temperature electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition system(ECR-PEMOCVD)with trimethyl gallium(TMGa)as gallium source.The influence of TMGa flux on the properties of GaN films were systematically investigated by reflection high energy electron diffraction(RHEED),X-ray diffraction analysis(XRD),atomic force microscopy(AFM)and Raman scattering.The GaN film with small surface roughness and high c-axis preferred orientation was successfully achieved at the optimized TMGa flux of 1.0 sccm.The ohmic contact characteristic between GaN and Ti layer was clearly demonstrated by the near-linear current-voltage(I-V)curve.The GaN/Ti/glass structure has great potential to dramatically improve the scalability and reduce the cost of solid-state lighting light emitting diodes.
