Various helium-containing titanium films were deposited on Si substrates by magnetron sputtering under different helium/argon (He/Ar) ambiances.Helium concentrations and corresponding depth profiles in the Ti films ar...Various helium-containing titanium films were deposited on Si substrates by magnetron sputtering under different helium/argon (He/Ar) ambiances.Helium concentrations and corresponding depth profiles in the Ti films are obtained by elastic recoil detection analysis (ERDA).X-ray diffraction (XRD) measurements are carried out to evaluate the crystallization of the titanium films.Vacancy-type defects and their depth profiles were revealed by slow positron beam analysis (SPBA).It is found that the defect-characteristic parameter S rises with the increment of the He/Ar flow ratios.The variation of S indicates the formation and evolution of various Herelated defects,with uniform distribution into the depth around 400nm.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 10775102 and 10775101.
文摘Various helium-containing titanium films were deposited on Si substrates by magnetron sputtering under different helium/argon (He/Ar) ambiances.Helium concentrations and corresponding depth profiles in the Ti films are obtained by elastic recoil detection analysis (ERDA).X-ray diffraction (XRD) measurements are carried out to evaluate the crystallization of the titanium films.Vacancy-type defects and their depth profiles were revealed by slow positron beam analysis (SPBA).It is found that the defect-characteristic parameter S rises with the increment of the He/Ar flow ratios.The variation of S indicates the formation and evolution of various Herelated defects,with uniform distribution into the depth around 400nm.
