High-power microwave damage to enhanced-mode Ga N high electron mobility transistors(HEMT)is studied considering the mechanical-electrical synergy effect due to the strong piezoelectric properties of Ga N,which has a ...High-power microwave damage to enhanced-mode Ga N high electron mobility transistors(HEMT)is studied considering the mechanical-electrical synergy effect due to the strong piezoelectric properties of Ga N,which has a wurtzite crystal structure.Based on the piezoelectric constitutive equation,the mechanical and electrical energies were equivalently coupled,and the effective numerical model was built in the simulation software.The results indicated that a part of the electrical energy was stored in the device as a form of elastic energy,causing the burnout time of Ga N HEMT to be extended.The effects of different injection voltages and frequencies were analyzed,and the results revealed that elastic energy plays a different role during the process of device damage.These results are of great significance for the design of Ga N HEMTs with better reliability in harsh electromagnetic environments and for improving their protection design.展开更多
基金supported by the National Natural Science Foundation of China(Grant No.61974116)the Innovation Fund of Xidian University(Grant No.YJSJ23019)+1 种基金the Fundamental Research Funds for the Central Universities(Grant No.ZYTS23029)the China Postdoctoral Science Foundation(Grant No.2019M663927XB)。
文摘High-power microwave damage to enhanced-mode Ga N high electron mobility transistors(HEMT)is studied considering the mechanical-electrical synergy effect due to the strong piezoelectric properties of Ga N,which has a wurtzite crystal structure.Based on the piezoelectric constitutive equation,the mechanical and electrical energies were equivalently coupled,and the effective numerical model was built in the simulation software.The results indicated that a part of the electrical energy was stored in the device as a form of elastic energy,causing the burnout time of Ga N HEMT to be extended.The effects of different injection voltages and frequencies were analyzed,and the results revealed that elastic energy plays a different role during the process of device damage.These results are of great significance for the design of Ga N HEMTs with better reliability in harsh electromagnetic environments and for improving their protection design.
