Electrochemical oxidation of BEDT-TTF (bis (ethylenedithio) tetrathiafulvalene) inchloroform/carbon disulfide (3:1) in the presence of Bu4NBr as a supporting electrolyte at lowcurrent density results in the (BEDT-TTF)...Electrochemical oxidation of BEDT-TTF (bis (ethylenedithio) tetrathiafulvalene) inchloroform/carbon disulfide (3:1) in the presence of Bu4NBr as a supporting electrolyte at lowcurrent density results in the (BEDT-TTF)2Br3H2O crystal. Its composition has been established bychemical analysis (Br, C, H, S), XPS and IR. The temperature dependence of the resistance has beenstudied down to 26K at ambient pressure. This material has weakly metallic behavior above 230K,and becomes a semiconductor below this temperature. The structure of the complex is alsodescribed.展开更多
Single crystals of MDA[Ni(dmit)2]2 were synthesized by using electrooxidation method.Electrical conductivity measurements exhibit a semiconducting feature with high conductivity at roomtemperature
文摘Electrochemical oxidation of BEDT-TTF (bis (ethylenedithio) tetrathiafulvalene) inchloroform/carbon disulfide (3:1) in the presence of Bu4NBr as a supporting electrolyte at lowcurrent density results in the (BEDT-TTF)2Br3H2O crystal. Its composition has been established bychemical analysis (Br, C, H, S), XPS and IR. The temperature dependence of the resistance has beenstudied down to 26K at ambient pressure. This material has weakly metallic behavior above 230K,and becomes a semiconductor below this temperature. The structure of the complex is alsodescribed.
文摘Single crystals of MDA[Ni(dmit)2]2 were synthesized by using electrooxidation method.Electrical conductivity measurements exhibit a semiconducting feature with high conductivity at roomtemperature
