The earth-abundant and robust aluminum ferrite,AlFeO_(3)(AFO),is mainly studied in the context of ferroelectrics.Herein,we demonstrate that AFO can be used as a stable solar absorber in photoelectrochemical cells for ...The earth-abundant and robust aluminum ferrite,AlFeO_(3)(AFO),is mainly studied in the context of ferroelectrics.Herein,we demonstrate that AFO can be used as a stable solar absorber in photoelectrochemical cells for solar water splitting,exhibiting attractive performance.This is the first report on the photoelectrochemical activity of AFO.AFO thin-film photoelectrodes prepared by solution-processing methods are composed of vertically oriented thin nanosheets,featuring the rhombohedral symmetry(R3c)and n-type conductivity.The as-prepared AFO photoanodes generate a photocurrent density of+0.78 mA·cm^(-2) at 1.23 V vs.reversible hydrogen electrode(RHE)with the photocurrent _(onset) potential(U_(onset))close to the flat band potential of 0.5 V vs.RHE in the presence of hole scavengers.Remarkably,the U_(onset) of AFO for solar water splitting coincides with the flat band potential as well,which is rare in n-type inorganic absorbers.We also report other properties of AFO associated with photoelectrochemical performance.AFO films exhibit a band gap energy of 2.31 eV and positive band edges with low dispersion.Moreover,the carrier lifetimes in AFO films are up to millisecond timescales under the mediation of defect traps.Based on the photoelectrochemical behavior and optoelectronic properties,we believe that AFO has great potential for application in photoelectrochemical cells.展开更多
In the study of exceptional point(EP)-based sensors,the concrete form of the output spectrum is often dismissed,and it is assumed that there is a corresponding relation between the peaks/valleys in the transmission sp...In the study of exceptional point(EP)-based sensors,the concrete form of the output spectrum is often dismissed,and it is assumed that there is a corresponding relation between the peaks/valleys in the transmission spectrum and the real parts of the eigenvalues of the system.We point out that this assumption does not always hold.An effect,which is mathematically similar to electromagnetically induced transparency(EIT),may result in a‘pseudo spectrum splitting’that does not correspond to the splitting between the eigenvalues.The effect shall be taken care of when designing an EP-based sensor since it may cause measurement error and misunderstanding such as recognization of the spectrum splitting as the eigenvalue splitting at the exceptional point.We also propose to intentionally utilize this‘pseudo splitting’to design a sensor,which does not work at an EP,that has an EP-like spectrum splitting.展开更多
Silicon-based hybrid solar cells(HSCs),especially PEDOT:PSS/Si HSC,have attracted the interest of researchers because they combine the advantages of organic and inorganic materials.A high quality PEDOT:PSS/Si heteroju...Silicon-based hybrid solar cells(HSCs),especially PEDOT:PSS/Si HSC,have attracted the interest of researchers because they combine the advantages of organic and inorganic materials.A high quality PEDOT:PSS/Si heterojunction is the key to the good performance of PEDOT:PSS/Si HSC.However,as generally requisite to enhance light absorption for HSCs,Si Micro/Nano structures will reduce the interface contact quality between PEDOT:PSS and Si surface.The inferior interface contact quality will limit the separation efficiency of the photogenerated carriers.In this paper,we summarize the research progress in improving the interface contact between Si Micro/Nano structures and PEDOT:PSS film from three aspects:the optimization of Si Micro/Nano structures aimed to improve the fluid properties of PEDOT:PSS solution,the material modification of PEDOT:PSS and interface modification with the purpose to enlarge the heterojunction area and improve the electrical contact,and the specific deposition process of PEDOT:PSS solution developed to achieve the high filling rate of PEDOT:PSS on Si Micro/Nano structures.The insight of this paper is helpful for the preparation of high-quality heterojunction,which is vitally important for the development of high efficiency PEDOT:PSS/Si HSCs.展开更多
基金support from the project of State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources(Nos.LAPS21004 and LAPS202114)the National Natural Science Foundation of China(Nos.52272200,51972110,52102245,52102203,and 52072121)+6 种基金China Postdoctoral Science Foundation(No.2022M721129)Beijing Science and Technology Project(No.Z211100004621010)Beijing Natural Science Foundation(Nos.2222076 and 2222077)Hebei Natural Science Foundation(No.E2022502022)Huaneng Group Headquarters Science and Technology Project(No.HNKJ20-H88)2022 Strategic Research Key Project of Science and Technology Commission of the Ministry of Education,the Fundamental Research Funds for the Central Universities(Nos.2022MS030,2021MS028,2020MS023,and 2020MS028)the NCEPU“Double First-Class”Program.
文摘The earth-abundant and robust aluminum ferrite,AlFeO_(3)(AFO),is mainly studied in the context of ferroelectrics.Herein,we demonstrate that AFO can be used as a stable solar absorber in photoelectrochemical cells for solar water splitting,exhibiting attractive performance.This is the first report on the photoelectrochemical activity of AFO.AFO thin-film photoelectrodes prepared by solution-processing methods are composed of vertically oriented thin nanosheets,featuring the rhombohedral symmetry(R3c)and n-type conductivity.The as-prepared AFO photoanodes generate a photocurrent density of+0.78 mA·cm^(-2) at 1.23 V vs.reversible hydrogen electrode(RHE)with the photocurrent _(onset) potential(U_(onset))close to the flat band potential of 0.5 V vs.RHE in the presence of hole scavengers.Remarkably,the U_(onset) of AFO for solar water splitting coincides with the flat band potential as well,which is rare in n-type inorganic absorbers.We also report other properties of AFO associated with photoelectrochemical performance.AFO films exhibit a band gap energy of 2.31 eV and positive band edges with low dispersion.Moreover,the carrier lifetimes in AFO films are up to millisecond timescales under the mediation of defect traps.Based on the photoelectrochemical behavior and optoelectronic properties,we believe that AFO has great potential for application in photoelectrochemical cells.
基金Natural Science Foundation of Shanghai(20ZR1429900)National Natural Science Foundation of China(11274230,11574206)。
文摘In the study of exceptional point(EP)-based sensors,the concrete form of the output spectrum is often dismissed,and it is assumed that there is a corresponding relation between the peaks/valleys in the transmission spectrum and the real parts of the eigenvalues of the system.We point out that this assumption does not always hold.An effect,which is mathematically similar to electromagnetically induced transparency(EIT),may result in a‘pseudo spectrum splitting’that does not correspond to the splitting between the eigenvalues.The effect shall be taken care of when designing an EP-based sensor since it may cause measurement error and misunderstanding such as recognization of the spectrum splitting as the eigenvalue splitting at the exceptional point.We also propose to intentionally utilize this‘pseudo splitting’to design a sensor,which does not work at an EP,that has an EP-like spectrum splitting.
基金This work is supported partially by National Natural Science Foundation of China(Grant nos.51772096,51972110 and 52072121)Beijing Science and Technology Project(Z181100005118002)+1 种基金Par-Eu Scholars Program,Science and Technology Beijing 100 Leading Talent Training Project,the Fundamental Research Funds for the Central Universities(2017ZZD02)the NCEPU“Double First-Class”Program.
文摘Silicon-based hybrid solar cells(HSCs),especially PEDOT:PSS/Si HSC,have attracted the interest of researchers because they combine the advantages of organic and inorganic materials.A high quality PEDOT:PSS/Si heterojunction is the key to the good performance of PEDOT:PSS/Si HSC.However,as generally requisite to enhance light absorption for HSCs,Si Micro/Nano structures will reduce the interface contact quality between PEDOT:PSS and Si surface.The inferior interface contact quality will limit the separation efficiency of the photogenerated carriers.In this paper,we summarize the research progress in improving the interface contact between Si Micro/Nano structures and PEDOT:PSS film from three aspects:the optimization of Si Micro/Nano structures aimed to improve the fluid properties of PEDOT:PSS solution,the material modification of PEDOT:PSS and interface modification with the purpose to enlarge the heterojunction area and improve the electrical contact,and the specific deposition process of PEDOT:PSS solution developed to achieve the high filling rate of PEDOT:PSS on Si Micro/Nano structures.The insight of this paper is helpful for the preparation of high-quality heterojunction,which is vitally important for the development of high efficiency PEDOT:PSS/Si HSCs.
