We present a systematical study on single crystalline FeSb2 using electrical transport and magnetic torque measurements at low temperatures. Nonlinear magnetic field dependence of Hall resistivity demonstrates a multi...We present a systematical study on single crystalline FeSb2 using electrical transport and magnetic torque measurements at low temperatures. Nonlinear magnetic field dependence of Hall resistivity demonstrates a multi-carrier transport instinct of the electronic transport. Current-controlled negative differential resistance(CC-NDR) observed in currentvoltage characteristics below ~ 7 K is closely associated with the intrinsic transition ~ 5 K of FeSb2, which is, however,mediated by extrinsic current-induced Joule heating effect. The antimony crystallized in a preferred orientation within the FeSb2 lattice in the high-temperature synthesis process leaves its fingerprint in the de Haas-Van Alphen(dHvA) oscillations, and results in the regular angular dependence of the oscillating frequencies. Nevertheless, possible existence of intrinsic non-trivial states cannot be completely ruled out. Our findings call for further theoretical and experimental studies to explore novel physics on flux-free grown FeSb_2 crystals.展开更多
We report the growth of ternary half-Heusler MnPtSn single crystals and detailed study on its structural and physical properties.MnPtSn single crystal has a larger lattice parameter than that in polycrystal and it exh...We report the growth of ternary half-Heusler MnPtSn single crystals and detailed study on its structural and physical properties.MnPtSn single crystal has a larger lattice parameter than that in polycrystal and it exhibits antiferromagnetism with transition temperature TN at about 215 K,distinctly different from the ferromagnetism of MnPtSn polycrystal.Hall resistivity measurement indicates that the dominant carriers are hole-type and the nearly temperature-independent carrier concentration reaches about 2.86×10^22 cm^-3 at 5 K.Moreover,the carrier mobility is also rather low(4.7 cm^2·V^-1s^-1 at 5 K).The above results strongly suggest that the significant Mn/Sn anti-site defects,i.e.,the content of Mn in MnPtSn single crystal,play a vital role on structural,magnetic and transport properties.展开更多
基金supported by Guangdong Innovative and Entrepreneurial Research Team Program,China(Grant No.2016ZT06D348)the National Natural Science Foundation of China(Grant No.11874193)+1 种基金the Shenzhen Fundamental Subject Research Program,China(Grant Nos.JCYJ20170817110751776 and JCYJ20170307105434022)The work at Brookhaven is supported by the US Department of Energy,Office of Basic Energy Sciences as part of the Computational Material Science Program(material synthesis)
文摘We present a systematical study on single crystalline FeSb2 using electrical transport and magnetic torque measurements at low temperatures. Nonlinear magnetic field dependence of Hall resistivity demonstrates a multi-carrier transport instinct of the electronic transport. Current-controlled negative differential resistance(CC-NDR) observed in currentvoltage characteristics below ~ 7 K is closely associated with the intrinsic transition ~ 5 K of FeSb2, which is, however,mediated by extrinsic current-induced Joule heating effect. The antimony crystallized in a preferred orientation within the FeSb2 lattice in the high-temperature synthesis process leaves its fingerprint in the de Haas-Van Alphen(dHvA) oscillations, and results in the regular angular dependence of the oscillating frequencies. Nevertheless, possible existence of intrinsic non-trivial states cannot be completely ruled out. Our findings call for further theoretical and experimental studies to explore novel physics on flux-free grown FeSb_2 crystals.
基金Supported by the National Key R&D Program of China(Grant Nos.2018YFE0202600,2016YFA0300504)the National Natural Science Foundation of China(Nos.11574394,11774423,11822412)+2 种基金the Fundamental Research Funds for the Central Universitiesthe Research Funds of Renmin University of China(RUC)(Nos.15XNLQ07,18XNLG14,19XNLG17)the Office of Basic Energy Sciences,Materials Sciences and Engineering Division,U.S.Department of Energy(DOE)under Contract No.DE-SC0012704。
文摘We report the growth of ternary half-Heusler MnPtSn single crystals and detailed study on its structural and physical properties.MnPtSn single crystal has a larger lattice parameter than that in polycrystal and it exhibits antiferromagnetism with transition temperature TN at about 215 K,distinctly different from the ferromagnetism of MnPtSn polycrystal.Hall resistivity measurement indicates that the dominant carriers are hole-type and the nearly temperature-independent carrier concentration reaches about 2.86×10^22 cm^-3 at 5 K.Moreover,the carrier mobility is also rather low(4.7 cm^2·V^-1s^-1 at 5 K).The above results strongly suggest that the significant Mn/Sn anti-site defects,i.e.,the content of Mn in MnPtSn single crystal,play a vital role on structural,magnetic and transport properties.