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Low voltage and robust InSe memristor using van der Waals electrodes integration 被引量:1
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作者 qianyuan li Quanyang Tao +5 位作者 Yang Chen lingan Kong Zhiwen Shu Huigao Duan Lei liao Yuan liu 《International Journal of Extreme Manufacturing》 SCIE EI 2021年第4期104-111,共8页
Memristors have attracted tremendous interest in the fields of high-density memory and neuromorphic computing.However,despite the tremendous efforts that have been devoted over recent years,high operating voltage,poor... Memristors have attracted tremendous interest in the fields of high-density memory and neuromorphic computing.However,despite the tremendous efforts that have been devoted over recent years,high operating voltage,poor stability,and large device variability remain key limitations for its practical application and can be partially attributed to the un-optimized interfaces between electrodes and the channel material.We demonstrate,for the first time,a van der Waals(vdW)memristor by physically sandwiching pre-fabricated metal electrodes on both sides of the two-dimensional channel material.The atomically flat bottom electrode ensures intimate contact between the channel and electrode(hence low operation voltage),and the vdW integration of the top electrode avoids the damage induced by aggressive fabrication processes(e.g.sputtering,lithography)directly applied to the channel material,improving device stability.Together,we demonstrate memristor arrays with a high integration density of 10^(10)cm^(−2),high stability,and the lowest set/reset voltage of 0.12 V/0.04 V,which is a record low value for all 2D-based memristors,as far as we know.Furthermore,detailed characterizations are conducted to confirm that the improved memristor behavior is the result of optimized metal/channel interfaces.Our study not only demonstrates robust and low voltage memristor,but also provides a general electrode integration approach for other memristors,such as oxide based memristors,that have previously been limited by non-ideal contact integration,high operation voltage and poor device stability. 展开更多
关键词 2D-material robust memristor ultra-low threshold atomically flat interfaces
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Electrically controllable laser frequency combs in graphene-fibre microresonators 被引量:7
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作者 Chenye Qin Kunpeng Jia +9 位作者 qianyuan li Teng Tan Xiaohan Wang Yanhong Guo Shu-Wei Huang Yuan liu Shining Zhu Zhenda Xie Yunjiang Rao Baicheng Yao 《Light(Science & Applications)》 SCIE EI CAS CSCD 2020年第1期220-228,共9页
Laser frequency combs emitting ultrafast pulses of light,at equidistantly discrete frequencies,are cornerstones of modern information networks.In recent years,the generation of soliton combs in microcavities with ultr... Laser frequency combs emitting ultrafast pulses of light,at equidistantly discrete frequencies,are cornerstones of modern information networks.In recent years,the generation of soliton combs in microcavities with ultrahighquality factors has established microcombs as out-oflaboratory tools.However,the material and geometry of a laser cavity,which determine comb formation,are difficult to electrically tune.Such dynamic control can further enrich the diversity of comb outputs and help to actively stabilize them. 展开更多
关键词 laser FREQUENCY FIBRE
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