Carrier migration path and driving forces are two crucial factors for charge separation of heterojunction with efficient photoelectric response from the thermodynamic and kinetic perspectives,respectively.Constructing...Carrier migration path and driving forces are two crucial factors for charge separation of heterojunction with efficient photoelectric response from the thermodynamic and kinetic perspectives,respectively.Constructing the S-scheme heterojunction and achieving an efficient migration path for space charge separation have aroused great interest,while a thorough insight into tuning interfacial band bending for S-scheme heterojunction is absent.Herein,we report a class of Zn atom-doped CeO_(2)/g-C_(3)N_(4) heterostructure for achieving a new carrier migration path conversion from inferior type-II to advanced S-scheme.Zn-dependent volcano-type plot for Zn-CeO_(2) is established to tune the Fermi level of CeO_(2).The built-in electric field for carrier flow dynamics strengthens when coupling with g-C_(3)N_(4),which significantly boosts the photoelectric response.Based on the intrinsic enzymelike activity of Zn-CeO_(2),we further demonstrate that the Zn-CeO_(2)/g-C_(3)N_(4) S-scheme heterojunction can be explored for constructing a sensitive nanozymatic photoelectrochemical biosensor for the detection of acetylcholinesterase.展开更多
基金supported by the National Natural Science Foundation of China(22104114)the Natural Science Foundation of Hubei Province(2021CFB518)+1 种基金the Fundamental Research Funds for the Central Universities(CCNU22JC006)the Program of Introducing Talents of Discipline to Universities of China(111 Program,B17019)。
文摘Carrier migration path and driving forces are two crucial factors for charge separation of heterojunction with efficient photoelectric response from the thermodynamic and kinetic perspectives,respectively.Constructing the S-scheme heterojunction and achieving an efficient migration path for space charge separation have aroused great interest,while a thorough insight into tuning interfacial band bending for S-scheme heterojunction is absent.Herein,we report a class of Zn atom-doped CeO_(2)/g-C_(3)N_(4) heterostructure for achieving a new carrier migration path conversion from inferior type-II to advanced S-scheme.Zn-dependent volcano-type plot for Zn-CeO_(2) is established to tune the Fermi level of CeO_(2).The built-in electric field for carrier flow dynamics strengthens when coupling with g-C_(3)N_(4),which significantly boosts the photoelectric response.Based on the intrinsic enzymelike activity of Zn-CeO_(2),we further demonstrate that the Zn-CeO_(2)/g-C_(3)N_(4) S-scheme heterojunction can be explored for constructing a sensitive nanozymatic photoelectrochemical biosensor for the detection of acetylcholinesterase.
