One memristor–one electrolyte-gated transistor-based high energy-efficient dropout neuronal units

Artificial neural networks(ANN) have been extensively researched due to their significant energy-saving benefits.Hardware implementations of ANN with dropout function would be able to avoid the overfitting problem. This letter reports a dropout neuronal unit(1R1T-DNU) based on one memristor–one electrolyte-gated transistor with an ultralow energy consumption of 25 p J/spike. A dropout neural network is constructed based on such a device and has been verified by MNIST dataset, demonstrating high recognition accuracies(> 90%) within a large range of dropout probabilities up to40%. The running time can be reduced by increasing dropout probability without a significant loss in accuracy. Our results indicate the great potential of introducing such 1R1T-DNUs in full-hardware neural networks to enhance energy efficiency and to solve the overfitting problem.

Analysis of Young Learners’Listening Skills

The importance of listening as one of the communication skills cannot be overstated.However,in many areas,listening is neglected.For young learners,learning to listen is even more beneficial for their future studies,therefore,listening skills should be given due importance.

CMOS-compatible neuromorphic devices for neuromorphic perception and computing: a review

Neuromorphic computing is a brain-inspired computing paradigm that aims to construct efficient,low-power,and adaptive computing systems by emulating the information processing mechanisms of biological neural systems.At the core of neuromorphic computing are neuromorphic devices that mimic the functions and dynamics of neurons and synapses,enabling the hardware implementation of artificial neural networks.Various types of neuromorphic devices have been proposed based on different physical mechanisms such as resistive switching devices and electric-double-layer transistors.These devices have demonstrated a range of neuromorphic functions such as multistate storage,spike-timing-dependent plasticity,dynamic filtering,etc.To achieve high performance neuromorphic computing systems,it is essential to fabricate neuromorphic devices compatible with the complementary metal oxide semiconductor(CMOS)manufacturing process.This improves the device’s reliability and stability and is favorable for achieving neuromorphic chips with higher integration density and low power consumption.This review summarizes CMOS-compatible neuromorphic devices and discusses their emulation of synaptic and neuronal functions as well as their applications in neuromorphic perception and computing.We highlight challenges and opportunities for further development of CMOS-compatible neuromorphic devices and systems.

Indium-gallium-zinc-oxide thin-film transistors:Materials,devices,and applications

Since the invention of amorphous indium-gallium-zinc-oxide(IGZO)based thin-film transistors(TFTs)by Hideo Hosono in 2004,investigations on the topic of IGZO TFTs have been rapidly expanded thanks to their high electrical performance,large-area uniformity,and low processing temperature.This article reviews the recent progress and major trends in the field of IGZO-based TFTs.After a brief introduction of the history of IGZO and the main advantages of IGZO-based TFTs,an overview of IGZO materials and IGZO-based TFTs is given.In this part,IGZO material electron travelling orbitals and deposition methods are introduced,and the specific device structures and electrical performance are also presented.Afterwards,the recent advances of IGZO-based TFT applications are summarized,including flat panel display drivers,novel sensors,and emerging neuromorphic systems.In particular,the realization of flexible electronic systems is discussed.The last part of this review consists of the conclusions and gives an outlook over the field with a prediction for the future.

单层MoS_(2)全包覆晶体管的电学性能极限

基于二维过渡金属硫化物的全包覆晶体管是后硅时代的理想电子器件,从玻尔兹曼输运理论出发,在考虑载流子的主要外秉散射机制后,针对三种典型的栅介质(Al_(2)O_(3),HfO_(2)和BN)构筑的单层MoS_(2)晶体管的电学性能进行了系统的理论研究。为解决介质中表面光学声子散射被高估这一常见问题,使计算更为准确,在电介质和沟道间的建模中引入了“死区”概念。重点针对微电子1nm及以下技术节点用途晶体管的电荷迁移率和电流密度等指标进行了探讨.研究表明,在沟道长度小于10nm的情况下,晶体管开态电流均可超2mAμm。上述结果阐明了基于单层半导体构筑晶体管在终极微缩条件下的性能潜力,对深度摩尔器件设计具有一定的参考价值。

Smartphone-Based Photoelectrochemical Immunoassay with Co_(9)S_(8)@ZnIn_(2)S_(4) for Point-of-Care Diagnosis of Breast Cancer Biomarker

Photoelectrochemical immunoassays incorporating specific antigen-antibody recognition reactions with the photon-electron conversion capabilities of photocatalysts have been developed for biomarker detection,but most involve bulky and expensive equipment and are unsuitable for point-of-care testing.

药师主导的肠外营养处方审核策略的分析与改进

不断完善肠外营养处方审核策略,提高药师处方审核的效率和准确率。药师设计计算公式和电子处方审核系统,对审核策略不断进行改进,改进分为三个阶段:改进前、改进第一阶段和改进第二阶段。对2019年1月至5月、2019年6月至10月和2020年6月至10月接受肠外营养支持的住院患者进行回顾性分析,以评估肠外营养处方审查的准确率和审核效率。与改进前相比,改进第一阶段肠外营养处方审核效率提高。此外,在改进第二阶段,肠外营养处方审核的效率和准确率显著提高(P<0.01)。通过对肠外营养处方审核策略的改进,提高了肠外营养处方审核的效率和准确性。此外,PDCA循环法有助于今后肠外营养审核过程的改进。

湖北省45所综合医院非精神科住院患者自杀行为的调查

目的了解湖北省综合医院非精神科住院患者自杀行为特征及影响因素。方法采用分层—目标抽样法,按照1∶1配比,抽取湖北省50所综合医院,采用住院患者自杀行为病例报告表对2015年1月1日—2017年12月31日所有医院护理不良事件报告系统中非精神科住院患者自杀未遂和自杀死亡的案例进行收集和分析。结果 45所医院接受了本次调查,共报告自杀病例169例,自杀行为发生率为3.48/10万住院人次。二级医院住院患者自杀行为发生率是三级医院的1.10倍;年龄≥60岁、学历为小学或初中、职业为无业或农民、患有恶性肿瘤或慢性疾病者更易发生自杀行为。自杀行为多出现在春季,00:00—07:59及住院1周内,主要发生在病房内,自杀方式以跳楼为主。自杀完成率高达49.11%,11所医院因患者自杀发生了医疗纠纷,自杀原因以躯体疾病、家庭关系、家庭经济状况为主。结论综合医院住院患者自杀行为发生率高,建议管理者针对非精神科住院患者自杀行为特征及影响因素对医护人员进行培训,提高医护人员对住院患者自杀的关注与重视。

Toward memristive in-memory computing:principles and applications

With the rapid growth of computer science and big data,the traditional von Neumann architecture suffers the aggravating data communication costs due to the separated structure of the processing units and memories.Memristive in-memory computing paradigm is considered as a prominent candidate to address these issues,and plentiful applications have been demonstrated and verified.These applications can be broadly categorized into two major types:soft computing that can tolerant uncertain and imprecise results,and hard computing that emphasizes explicit and precise numerical results for each task,leading to different requirements on the computational accuracies and the corresponding hardware solutions.In this review,we conduct a thorough survey of the recent advances of memristive in-memory computing applications,both on the soft computing type that focuses on artificial neural networks and other machine learning algorithms,and the hard computing type that includes scientific computing and digital image processing.At the end of the review,we discuss the remaining challenges and future opportunities of memristive in-memory computing in the incoming Artificial Intelligence of Things era.

Artificial neuron synapse transistor based on silicon nanomembrane on plastic substrate

Silicon nanomembrane（SiNM）transistors gated by chitosan membrane were fabricated on plastic substrate to mimic synapse behaviors.The device has both a bottom proton gate（BG）and multiple side gates（SG）.Electrical transfer properties of BG show hysteresis curves different from those of typical SiO2 gate dielectric.Synaptic behaviors and functions by linear accumulation and release of protons have been mimicked on this device：excitatory post-synaptic current（EPSC）and paired pulse facilitation behavior of biological synapses were mimicked and the paired-pulse facilitation index could be effectively tuned by the spike interval applied on the BG.Synaptic behaviors and functions,including short-term memory and long-term memory,were also experimentally demonstrated in BG mode.Meanwhile,spiking logic operation and logic modulation were realized in SG mode.

A novel Stokes parameters coding scheme for free-space coherent optical communication

This paper proposes a novel continuous variable coherent optical communication mode. In this mode, two quadrature Stokes parameters are regarded as observed physical quantity, and single linearly polarized component is used as carrier wave. At the sending end, electro-optical amplitude modulator （EOM） of 45° azimuth is used to indirectly complete the linear modulation of S2 component, and S3 component is changed by continuously rotating a half-wave plate （HWP）. The receiving end adopts the mode of Q-Q-H wave plate are rotated to select the component of measured S2 or S3. The circuit of balance homodyne detection is designed, and the detection system is built by combination with LabVIEW to complete signal demodulation. New optical path scheme is verified by both theory and experiment.

Oxide-based thin film transistors for flexible electronics

The continuous progress in thin film materials and devices has greatly promoted the development in the field of flexible electronics. As one of the most common thin film devices, thin film transistors（TFTs） are significant building blocks for flexible platforms. Flexible oxide-based TFTs are well compatible with flexible electronic systems due to low process temperature, high carrier mobility, and good uniformity. The present article is a review of the recent progress and major trends in the field of flexible oxide-based thin film transistors. First, an introduction of flexible electronics and flexible oxide-based thin film transistors is given. Next, we introduce oxide semiconductor materials and various flexible oxide-based TFTs classified by substrate materials including polymer plastics, paper sheets, metal foils, and flexible thin glass. Afterwards, applications of flexible oxide-based TFTs including bendable sensors, memories, circuits, and displays are presented. Finally, we give conclusions and a prospect for possible development trends.

n-type Polycrystalhne Si Thick Films Deposited on SiN_x-coated Metallurgical Grade Si Substrates

For photovoltaic applications,low-cost SiNx-coated metallurgical grade silicon（MG-Si） wafers were used as substrates for polycrystalline silicon（poly-Si） thick films deposition at temperatures ranging from 640 to880 ℃ by thermal chemical vapor deposition.X-ray diffraction and Raman results indicated that high-quality poly-Si thick films were deposited at 880 ℃.To obtain n-type poly-Si,the as-deposited poly-Si films were annealed at 880 ℃ capped with a phosphosilicate glass.Electrical properties of the n-type poly-Si thick films were investigated by four-probe and Hall measurements.The carrier concentration and electron mobility of the n-type poly-Si film was estimated to be 1.7 x 1019cm-3and 68.1 cm2V-1s-1,respectively.Highquality poly-Si thick films deposited on MG-Si wafers are very promising for photovoltaic applications.