内镜与显微镜下经单侧鼻蝶入路手术切除垂体腺瘤的效果和对T淋巴细胞亚群的影响

目的探讨内镜与显微镜下经单侧鼻蝶入路手术治疗垂体腺瘤的效果。方法选取2018年10月-2020年10月该院垂体腺瘤患者112例,依据随机数表法分为内镜组与显微镜组,每组各56例。内镜组采取内镜下单侧鼻蝶入路手术,显微镜组采取显微镜下经单侧鼻蝶入路手术。统计两组患者肿瘤切除效果、手术情况、T淋巴细胞亚群指标、应激反应指标[肾素(R)、血管紧张素Ⅱ(ATⅡ)、肾上腺素(E)、去甲肾上腺素(NE)]、生存质量和并发症发生率。结果内镜组肿瘤全切率(91.07%)高于显微镜组(76.79%)(P<0.05),手术时间和住院时间较显微镜组短,术中失血量较显微镜组少,住院费用较显微镜组少(P<0.05),术后1和3 d内镜组CD3^(+)、CD4^(+)、CD4^(+)/CD8^(+)水平较显微镜组高,血清R、ATⅡ、E和NE水平较显微镜组低(P<0.05),术后1周内镜组鼻部相关生存质量评分较显微镜组低(P<0.05),内镜组并发症发生率(5.36%)较显微镜组(17.86%)低(P<0.05)。结论与显微镜下经单侧鼻蝶入路手术相比,内镜下手术治疗垂体腺瘤具有肿瘤切除效果好、患者术后恢复快等优势,可减轻应激反应及缓解免疫抑制,值得临床推广。

Ferroelectric artificial synapse for neuromorphic computing and flexible applications

Research of artificial synapses is increasing in popularity with the development of bioelectronics and the appearance of wearable devices.Because the high-temperature treatment process of inorganic materials is not compatible with flexible substrates,organic ferroelectric materials that are easier to process have emerged as alternatives.An organic synaptic device based on P(VDF-TrFE)was prepared in this study.The device showed reliable P/E endurance over 104 cycles and a data storage retention capability at 80℃ over 104 s.Simultaneously,it possessed excellent synaptic functions,including short-term/long-term synaptic plasticity and spike-timing-dependent plasticity.In addition,the ferroelectric performance of the device remained stable even under bending(7 mm bending radius)or after 500 bending cycles.This work shows that low-temperature processed organic ferroelectric materials can provide new ideas for the future development of wearable electronics and flexible artificial synapses.

Atomic layer deposited 2D MoS2 atomic crystals:From material to circuit

Atomic layer deposition(ALD)can be used for wafer-scale synthesis of 2D materials.In this paper,a novel,reliable,secure,low-cost,and high-efficiency process for the fabrication of MoS2 is introduced and investigated.The resulting 2D materials show high carrier-mobility as well as excellent electrical uniformity.Using molybdenum pentachloride(MoCl5)and hexamethyldisilathiane(HMDST)as ALD precursors,thickness-controlled MoS2 films are uniformly deposited on a 50 mm sapphire and a 100 mm silica substrate.This is done with a high growth-rate(up to 0.90Å/cycle).Large-scale top-gated FET arrays are fabricated using the films,with a room-temperature mobility of 0.56 cm2/(V·s)and a high on/off current ratio of 106.Excellent electrical uniformity is observed in the whole sapphire wafer.Additionally,logical circuits,including inverters,NAND,AND,NOR,and OR gates,are realized successfully with a high-k HfO2 dielectric layer.Our inverters exhibit a fast response frequency of 50 Hz and a DC-voltage gain of 4 at VDD=4 V.These results indicate that the new method has the potential to synthesize high quality MoS2 films on a large-scale,with hypo-toxicity and enhanced efficiency,which can facilitate a broader range of applications in the future.

Flexible 3D memristor array for binary storage and multi-states neuromorphic computing applications

The demand of flexible neuromorphic computing electronics is increasing with the rapid development of wearable artificial intelligent devices.The flexible resistive random-access memory(RRAM)is one excellent candidate of highdensity storage devices.However,due to the limitations of fabrication process,materials system and device structure,it is difficult to prepare flexible 3D highdensity network for neuromorphic computing.In this paper,a 3D flexible memristors network is developed via low-temperature atomic layer deposition(ALD)at 130C,with potential of extending to various flexible electronics.The typical bipolar switching characteristics are verified in RRAM units of 3D network,including first,second and third layers.Besides binary storage,the multibit storage in single unit is demonstrated and the storage density is further increased.As a connection link between binary storage and brain-inspired neuromorphic computing,the multibit storage capability paves the way for the tunable synaptic plasticity,for example,long-term potentiation/depression(LTP/LTD).The 3D memristors network successfully mimicked the typical neuromorphic functionality and realized ultra-multi conductance states modulation under 600 spikes.The robust mechanical flexibility is further demonstrated via LTP/LTD emulation under bending states(radius=10 mm).The 3D flexible memristors network shows significant potential of applications in high-performance,high-density and reliable wearable neuromorphic computing system.

Forming-free flexible memristor with multilevel storage for neuromorphic computing by full PVD technique

Flexible resistive random access memory(RRAM) has shown great potential in wearable electronics.With tunable multilevel resistance states,flexible memristors could be used to mimic the bio-synapses for constructing high-efficient wearable neuromorphic computing system.However,the flexible substrate has intrinsic disadvantages including low-tempe rature tolerance and poor complementary metal-oxidesemiconductor(CMOS) compatibility,which limit the development of flexible electronics.The physical vapor deposition(PVD) fabrication process could prepare RRAM without requirement of further treatment,which greatly simplified preparation steps and reduced the production costs.On the other hand,forming process,as a common pre-programing operation in RRAM,increases the energy consumption and limits the application scenarios of RRAM.Here,a NiO-based forming-free RRAM with low set voltage was fabricated via full PVD technique.The flexible device exhibited reliable re sistive switching characteristics under flat state even compre s sive and tensile states(R=10 mm).The tunable multilevel resistance states(5 levels) could be obtained by controlling the compliance current.Besides,synaptic plasticities also were verified in this device.The flexible NiO-based RRAM shows great potential in wearable forming-free multibit memo ry and neuromorphic computing electronics.

Sensitive MoS_(2)photodetector cell with high air-stability for multifunctional in-sensor computing

With the development of artificial intelligence and the Internet of Things,the number of sensory nodes is growing rapidly,leading to the exchange of large quantities of redundant data between sensors and computing units.Insensor computing schemes,which integrate sensing and processing,have provided a promising route to addressing the sensing/processing bottleneck by reducing power consumption,time delay and hardware redundancy.In this study,an in-sensor computing architecture involving a photoelectronic cell based on a wafer-scale two-dimensional MoS_(2)thin film was demonstrated.The MoS_(2)photodetector cell used a top-gate device structure with in-dium tin oxide(ITO)as the transparent gate electrode,which exhibited high air-stability and a high photoresponsivity(R)up to 555.8 A W^(-1) at an illumination power density(P_(in))of 16.0μW cm^(-2)(λ=500 nm).Additionally,a MoS_(2)photodetector array with uniform photoresponsive characteristics was achieved.Furthermore,logic gates,including inverter,NAND,and NOR,were achieved based on MoS_(2)photodetector cells.Such multifunctional and robust in-sensor computing was ascribed to the uniform wafer-scale MoS_(2)film grown by atomic layer deposition(ALD)and the unique device structure.Because the detection of optical signals and logic operations were achieved through MoS_(2)photodetector cells with area efficiency,the proposed in-sensor computing device paves the way for potential applications in high-performance,integrated sensing and processing systems.