Recently, polymers with aggregation-induced emission(AIE) effects have attracted significant attention due to their broad applications in luminescence sensors, stimuli responsive materials, electroluminescence devices...Recently, polymers with aggregation-induced emission(AIE) effects have attracted significant attention due to their broad applications in luminescence sensors, stimuli responsive materials, electroluminescence devices, etc. In this review, we summarize recent advances concerning AIE polymers. Four types of AIE polymers including end-functionalized polymers, side-chain polymers, main-chain polymers, and other polymers according to the location of AIEgens, are described. Their synthetic preparation, optical property, AIE effects, and applications are also illustrated in this review.展开更多
Memristors are a new type of circuit element with a resistance that is tunable to discrete levels by a voltage/current and sustainable after removal of power,allowing for low-power computation and multilevel informati...Memristors are a new type of circuit element with a resistance that is tunable to discrete levels by a voltage/current and sustainable after removal of power,allowing for low-power computation and multilevel information storage.Many organic-inorganic lead perovskites are reported to demonstrate memristive behavior,but few have been considered for use as a multilevel memory;also,their potential application has been hindered by the toxicity of lead ions.In this article,lead-free perovskite MASnBr3 was utilized in memristors for quaternary information storage.Indium tin oxide(ITO)/MASnBr3/Au memristors were fabricated and showed reliable memristive switching with well-separated ON/OFF states of a maxima resistance ratio of 102 to 103.More importantly,four resistive states can be distinguished and repeatedly written/read/erased with a retention time of 104 seconds and an endurance of 104 pulses.By investigating the current-electrode area relationship,Br distribution in the ON/OFF states by in situ Raman and scanning electron microscopy,and temperaturedependent current decay,the memristive behavior was explicitly attributed to the forming/breaking of conductive filaments caused by the migration of Br−under an electric field.In addition,poly(ethylene terephthalate)-ITO/MASnBr3/Au devices were found to retain their multiresistance state behavior after being bent for 1000 times,thus demonstrating good device flexibility.Our results will inspire more lead-free perovskite work for multilevel information storage,as well as other memristor-based electronics.展开更多
Multilevel resistance random access memories(RRAMs) are intensively studied due to their potential applications in high density information storage. However, the low ternary device yields and high threshold voltages b...Multilevel resistance random access memories(RRAMs) are intensively studied due to their potential applications in high density information storage. However, the low ternary device yields and high threshold voltages based on current materials cannot meet the requirement for applications. Improvement via material innovation remains desirable and challenging. Herein,five one-dimensional conjugated coordination polymers were synthesized via the reaction between metal ions(Zn^(2+), Cu^(2+), Ni^(2+),Pt^(2+) and Pd^(2+)) and 2,5-diaminobenzene-1,4-dithiol(DABDT) and fabricated into RRAM devices. The as-fabricated ternary memories have relatively low threshold voltages(V_(th1):-1 to-1.4 V, V_(th2):-1.8 to-2.2 V). Their ternary device yields were improved from 24% to 56%. The first and the second resistance switches are interpreted by the space charge limited current(SCLC) and grain boundary depletion limited current(GBLC) modes, respectively. The Pd-DABDT, which is of planar structure,smaller band gap and better crystallinity than others, shows the best performance among these five polymers. Our work paves a simple and efficient way to optimize the performance of ternary RRAM devices employing one-dimensional hybrid materials.展开更多
基金supported by the National Natural Science Foundation of China(No.51178115)the Priority Academic Program Development of Jiangsu Higher Education Institutionsthe Shanghai RisingStar Program(No.11QH1402100),China
基金financially supported by the National Natural Science Foundation of China (Nos. 21776190, 21336005, and 51773144)PAPD in Jiangsu Province
文摘Recently, polymers with aggregation-induced emission(AIE) effects have attracted significant attention due to their broad applications in luminescence sensors, stimuli responsive materials, electroluminescence devices, etc. In this review, we summarize recent advances concerning AIE polymers. Four types of AIE polymers including end-functionalized polymers, side-chain polymers, main-chain polymers, and other polymers according to the location of AIEgens, are described. Their synthetic preparation, optical property, AIE effects, and applications are also illustrated in this review.
基金Major Research Project of Natural Scientific Research Foundation of the Higher Education Institutions in Jiangsu Province,Grant/Award Number:17KJA150010Natural Science Foundation of China,Grant/Award Numbers:21978185,21938006,21603158Priority Academic Program Development of Jiangsu Higher Education Institutions(PAPD)。
文摘Memristors are a new type of circuit element with a resistance that is tunable to discrete levels by a voltage/current and sustainable after removal of power,allowing for low-power computation and multilevel information storage.Many organic-inorganic lead perovskites are reported to demonstrate memristive behavior,but few have been considered for use as a multilevel memory;also,their potential application has been hindered by the toxicity of lead ions.In this article,lead-free perovskite MASnBr3 was utilized in memristors for quaternary information storage.Indium tin oxide(ITO)/MASnBr3/Au memristors were fabricated and showed reliable memristive switching with well-separated ON/OFF states of a maxima resistance ratio of 102 to 103.More importantly,four resistive states can be distinguished and repeatedly written/read/erased with a retention time of 104 seconds and an endurance of 104 pulses.By investigating the current-electrode area relationship,Br distribution in the ON/OFF states by in situ Raman and scanning electron microscopy,and temperaturedependent current decay,the memristive behavior was explicitly attributed to the forming/breaking of conductive filaments caused by the migration of Br−under an electric field.In addition,poly(ethylene terephthalate)-ITO/MASnBr3/Au devices were found to retain their multiresistance state behavior after being bent for 1000 times,thus demonstrating good device flexibility.Our results will inspire more lead-free perovskite work for multilevel information storage,as well as other memristor-based electronics.
基金supported by the National Natural Science Foundation of China (21603158, 21336005)the Major Research Project of Natural Scientific Research Foundation of the Higher Education Institutions in Jiangsu Province (15KJA150008, 17KJA150010)+1 种基金Suzhou Science and Technology Bureau Project (SYG201524)the Priority Academic Program Development of Jiangsu Higher Education Institutions
文摘Multilevel resistance random access memories(RRAMs) are intensively studied due to their potential applications in high density information storage. However, the low ternary device yields and high threshold voltages based on current materials cannot meet the requirement for applications. Improvement via material innovation remains desirable and challenging. Herein,five one-dimensional conjugated coordination polymers were synthesized via the reaction between metal ions(Zn^(2+), Cu^(2+), Ni^(2+),Pt^(2+) and Pd^(2+)) and 2,5-diaminobenzene-1,4-dithiol(DABDT) and fabricated into RRAM devices. The as-fabricated ternary memories have relatively low threshold voltages(V_(th1):-1 to-1.4 V, V_(th2):-1.8 to-2.2 V). Their ternary device yields were improved from 24% to 56%. The first and the second resistance switches are interpreted by the space charge limited current(SCLC) and grain boundary depletion limited current(GBLC) modes, respectively. The Pd-DABDT, which is of planar structure,smaller band gap and better crystallinity than others, shows the best performance among these five polymers. Our work paves a simple and efficient way to optimize the performance of ternary RRAM devices employing one-dimensional hybrid materials.
