Improvement strategy on thermophysical properties of A_(2)B_(2)O_(7)-type rare earth zirconates for thermal barrier coatings applications:A review

The A_(2)B_(2)O_(7)-type rare earth zirconate compounds have been considered as promising candidates for thermal barrier coating(TBC) materials because of their low sintering rate,improved phase stability,and reduced thermal conductivity in contrast with the currently used yttria-partially stabilized zirconia (YSZ) in high operating temperature environments.This review summarizes the recent progress on rare earth zirconates for TBCs that insulate high-temperature gas from hot-section components in gas turbines.Based on the first principles,molecular dynamics,and new data-driven calculation approaches,doping and high-entropy strategies have now been adopted in advanced TBC materials design.In this paper,the solid-state heat transfer mechanism of TBCs is explained from two aspects,including heat conduction over the full operating temperature range and thermal radiation at medium and high temperature.This paper also provides new insights into design considerations of adaptive TBC materials,and the challenges and potential breakthroughs are further highlighted for extreme environmental applications.Strategies for improving thermophysical performance are proposed in two approaches:defect engineering and material compositing.

基于Mo_(0.8)Si_(0.2)纳米线的中红外超导单光子探测器

由于中红外波段光子能量大大低于可见/近红外波段光子,中红外单光子探测是光电探测领域的研究热点和难点.本文研制出一种低能隙超导体MoSi纳米线中红外单光子探测器.该探测器具有极高的灵敏度,最长响应波长超过10μm,在1.55~5.07μm波段上的量子效率均高于97%,噪声等效功率低至10^(-18)W/Hz^(1/2)量级.该工作在前沿科学研究和军事国防领域具有重要应用前景.

Temperature dependence of niobium superconducting nanowire single-photon detectors in He-3 cryocooler

Performances of superconducting nanowire single-photon detectors(SNSPDs) based on low TCmaterials strongly depend on the operating temperatures. We have fabricated infrared-sensitive niobium SNSPDs based on doped niobium(Nb*) films and measured them in He-3cryocooler. The critical current approaches to the de-pairing current at 0.3 K. Therefore, with the decrease in temperatures, we have observed a monotonous increase of count rate at the wavelength of 1,521 nm and exponential decrease of dark count rate at all bias currents. The possible origin of dark counts for doped Nb devices is also discussed.

Enhanced photon communication through Bayesian estimation with an SNSPD array

Laser communication using photons should consider not only the transmission environment’s effects,but also the performance of the single-photon detector used and the photon number distribution.Photon communication based on the superconducting nanowire single-photon detector(SNSPD)is a new technology that addresses the current sensitivity limitations at the level of single photons in deep space communication.The communication’s bit error rate(BER)is limited by dark noise in the space environment and the photon number distribution with a traditional single-pixel SNSPD,which is unable to resolve the photon number distribution.In this work,an enhanced photon communication method was proposed based on the photon number resolving function of four-pixel array SNSPDs.A simulated picture transmission was carried out,and the error rate in this counting mode can be reduced by 2 orders of magnitude when compared with classical optical communication.However,in the communication mode using photon-enhanced counting,the four-pixel response amplitude for counting was found to restrain the communication rate,and this counting mode is extremely dependent on the incident light intensity through experiments,which limits the sensitivity and speed of the SNSPD array’s performance advantage.Therefore,a BER theoretical calculation model for laser communication was presented using the Bayesian estimation algorithm in order to analyze the selection of counting methods for information acquisition under different light intensities and to make better use of the SNSPD array’s high sensitivity and speed and thus to obtain a lower BER.The counting method and theoretical model proposed in this work refer to array SNSPDs in the deep space field.

Saturation efficiency for detecting 1550 nm photons with a 2×2 array of Mo0.8Si0.2 nanowires at 2.2 K

Amorphous materials are attractive candidates for fabricating the superconducting nanowire single-photon detectors(SNSPDs) due to their superior tolerance and scalability over crystalline niobium nitride. However, the reduced superconducting transition temperature degenerates both operating temperature and saturation efficiency. Herein, the SNSPD(6.5 nm thickness and 50 nm width) based on the amorphous Mo0.8Si0.2 film with a high optical absorption coefficient demonstrates close-to-unity intrinsic detection efficiency for 1550 nm photons from 75 m K to 2.2 K. Further, a high-performance array SNSPD with optimized 90 nm-width wires is also demonstrated. As-fabricated uniform 4-pixel SNSPD exhibits a saturation plateau for the photon counts at 2.2 K,which overcomes the limitation of operation at low temperature(< 1 K) for traditional amorphous SNSPDs.Coupled with superior intrinsic quantum efficiency, highly efficient photon counts, and low dark count ratio, this detector paves a way for achieving high efficiency and superior yield for large array systems.

Wideband cryogenic amplifier for a superconducting nanowire single-photon detector

We present a low-power inductorless wideband differential cryogenic amplifier using a 0.13-μm Si Ge Bi CMOS process for a superconducting nanowire single-photon detector(SNSPD).With a shunt-shunt feedback and capacitive coupling structure,theoretical analysis and simulations were undertaken,highlighting the relationship of the amplifier gain with the tunable design parameters of the circuit.In this way,the design and optimization flexibility can be increased,and a required gain can be achieved even without an accurate cryogenic device model.To realize a flat terminal impedance over the frequency of interest,an RC shunt compensation structure was employed,improving the amplifier’s closed-loop stability and suppressing the amplifier overshoot.The S-parameters and transient performance were measured at room temperature(300 K)and cryogenic temperature(4.2 K).With good input and output matching,the measurement results showed that the amplifier achieved a 21-d B gain with a 3-d B bandwidth of 1.13 GHz at 300 K.At 4.2 K,the gain of the amplifier can be tuned from 15 to 24 d B,achieving a 3-d B bandwidth spanning from 120 k Hz to 1.3 GHz and consuming only 3.1 m W.Excluding the chip pads,the amplifier chip core area was only about 0.073 mm^(2).