A generalized large-signal computer simulation program for a Gunn oscillator has been developed. The properties of a Gunn diode oscillator based on the widely explored GaN, are investigated using the developed program...A generalized large-signal computer simulation program for a Gunn oscillator has been developed. The properties of a Gunn diode oscillator based on the widely explored GaN, are investigated using the developed program. The results show some interesting properties in GaN Gunn diodes which are not seen in GaAs and InP diodes. An output power of 1400 kW/cm^2 is achieved from the GaN Gunn diode, as compared to 4.9 kW/cm^2 from a GaAs diode.展开更多
基金Project supported by Department of Science and Technology,Government of India through SERC,FIST and TIFAC Program
文摘A generalized large-signal computer simulation program for a Gunn oscillator has been developed. The properties of a Gunn diode oscillator based on the widely explored GaN, are investigated using the developed program. The results show some interesting properties in GaN Gunn diodes which are not seen in GaAs and InP diodes. An output power of 1400 kW/cm^2 is achieved from the GaN Gunn diode, as compared to 4.9 kW/cm^2 from a GaAs diode.
