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Fabrication and modeling of multi-layer metal–insulator-metal capacitors
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作者 r karthik A Akshaykranth 《Journal of Semiconductors》 EI CAS CSCD 2017年第12期32-36,共5页
This paper presents the fabrication and modeling for capacitance-voltage characteristics of multi-layer metal-insulator-metal capacitors. It is observed that, due the applied electric field, the effective dielectric c... This paper presents the fabrication and modeling for capacitance-voltage characteristics of multi-layer metal-insulator-metal capacitors. It is observed that, due the applied electric field, the effective dielectric constant of the stack was increased due to the accumulation of charges at the interface of high-to-low conductance materials. It is observed that the Maxwell-Wagner polarization is dominant at low frequencies (〈10 kHz). By introducing carrier tunneling probability of the dielectric stack, the model presented in this paper shows a good agreement with experimental results. The presented model indicates that the nonlinearity can be suppressed by choosing the similar permittivity dielectric materials for fabrication of multilayer metal insulator metal capacitors. 展开更多
关键词 anodic oxidation dielectric HIGH-K MULTI-LAYER CAPACITANCE-VOLTAGE Maxwell-Wagner capacitor
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