Schottky diodes with an Ag/n-Si/W/Cu structure and 100μm in diameter were studied.Analyzing the silver metal surface coating on the n-Si substrate using a scanning probe microscopy（SPM） device showed a large number...Schottky diodes with an Ag/n-Si/W/Cu structure and 100μm in diameter were studied.Analyzing the silver metal surface coating on the n-Si substrate using a scanning probe microscopy（SPM） device showed a large number of nano patches in the surface with dimensions of 0 to 100 nm.The potential distribution of the patches revealed that the potential of each patch with the neighboring patches was different.The electrical characteristics of the devices were studied between temperature ranges of 300 and 380 K.When the temperature ideality factor approximately increases,the potential barrier height decreases.The potential barrier height was calculated separately from theⅠ-Ⅴand C-V characteristics.The main reasons for the significant difference between room temperature and higher temperatures were the differences in patch distribution,the different potentials of each patch,and the interactions between them.The effective potential barrier height depended on the degree of inhomogeneity,and thus the operating potential barrier height in the contact surface was smaller than the average value,and the ideality factor was more than unitary.With the increase in the potential value,the ideality factor becomes close to unitary, and with increasing temperatures,the ideality factor is increased.In this case,the maximum potential barrier height accrues at a greater distance from the metal contact.For this reason,at high temperatures the average value of the potential barrier height is smaller.Moreover,with increasing temperature,the ideality factor is increased.展开更多
文摘Schottky diodes with an Ag/n-Si/W/Cu structure and 100μm in diameter were studied.Analyzing the silver metal surface coating on the n-Si substrate using a scanning probe microscopy（SPM） device showed a large number of nano patches in the surface with dimensions of 0 to 100 nm.The potential distribution of the patches revealed that the potential of each patch with the neighboring patches was different.The electrical characteristics of the devices were studied between temperature ranges of 300 and 380 K.When the temperature ideality factor approximately increases,the potential barrier height decreases.The potential barrier height was calculated separately from theⅠ-Ⅴand C-V characteristics.The main reasons for the significant difference between room temperature and higher temperatures were the differences in patch distribution,the different potentials of each patch,and the interactions between them.The effective potential barrier height depended on the degree of inhomogeneity,and thus the operating potential barrier height in the contact surface was smaller than the average value,and the ideality factor was more than unitary.With the increase in the potential value,the ideality factor becomes close to unitary, and with increasing temperatures,the ideality factor is increased.In this case,the maximum potential barrier height accrues at a greater distance from the metal contact.For this reason,at high temperatures the average value of the potential barrier height is smaller.Moreover,with increasing temperature,the ideality factor is increased.
