Here we discuss the synthesis of copper(II)oxide(CuO)and manganese(Mn)-doped CuO thin films varying with 0 to 8 at%Mn using the spray pyrolysis technique.As-deposited film surfaces comprised of agglomerated spherical ...Here we discuss the synthesis of copper(II)oxide(CuO)and manganese(Mn)-doped CuO thin films varying with 0 to 8 at%Mn using the spray pyrolysis technique.As-deposited film surfaces comprised of agglomerated spherical nanoparticles and a semi-spongy porous structure for 4 at%Mn doping.Energy dispersive analysis of X-rays confirmed the chemical composi-tion of the films.X-ray diffraction spectra showed a polycrystalline monoclinic structure with the predominance of the(11)peak.Optical band gap energy for direct and indirect transitions was estimated in the ranges from 2.67-2.90 eV and 0.11-1.73 eV,respectively.Refractive index and static dielectric constants were computed from the optical spectra.Electrical resistivity of CuO and Mn-doped CuO(Mn:CuO)thin films was found in the range from 10.5 to 28.6Ω·cm.The tiniest electron effective mass was calculated for 4 at%Mn:CuO thin films.P to n-type transition was observed for 4 at%Mn doping in CuO films.Carrier con-centration and mobility were found in the orders of 10^(17)cm^(-3)and 10^(-1)cm^(2)/(V·s),respectively.The Hall coefficient was found to be between 9.9 and 29.8 cm^(3)/C.The above results suggest the suitability of Mn:CuO thin films in optoelectronic applications.展开更多
基金the Bangladesh University of Engineering and Technology,Dhaka,Bangladesh,for financial support and the spray pyrolysis lab of the Department of Physics to perform this work。
文摘Here we discuss the synthesis of copper(II)oxide(CuO)and manganese(Mn)-doped CuO thin films varying with 0 to 8 at%Mn using the spray pyrolysis technique.As-deposited film surfaces comprised of agglomerated spherical nanoparticles and a semi-spongy porous structure for 4 at%Mn doping.Energy dispersive analysis of X-rays confirmed the chemical composi-tion of the films.X-ray diffraction spectra showed a polycrystalline monoclinic structure with the predominance of the(11)peak.Optical band gap energy for direct and indirect transitions was estimated in the ranges from 2.67-2.90 eV and 0.11-1.73 eV,respectively.Refractive index and static dielectric constants were computed from the optical spectra.Electrical resistivity of CuO and Mn-doped CuO(Mn:CuO)thin films was found in the range from 10.5 to 28.6Ω·cm.The tiniest electron effective mass was calculated for 4 at%Mn:CuO thin films.P to n-type transition was observed for 4 at%Mn doping in CuO films.Carrier con-centration and mobility were found in the orders of 10^(17)cm^(-3)and 10^(-1)cm^(2)/(V·s),respectively.The Hall coefficient was found to be between 9.9 and 29.8 cm^(3)/C.The above results suggest the suitability of Mn:CuO thin films in optoelectronic applications.
