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Application of Reactive Ion Etching to the Fabrication of Microstructure on Mo/Si Multilayer 被引量:1
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作者 LE Zi-chun L.Dreeskornfeld +3 位作者 S.Rahn r.segler U.Kleineberg U.Heinzmann 《Chinese Physics Letters》 SCIE CAS CSCD 1999年第9期665-666,共2页
Mo/Si muitilayer mirrors(30 periods,doublelayer thickness 7nm)with the AZ-PF514 resist pattern whose smallest lines and spaces structure was 0.5pm were etched by reactive ion etching(RIE)in a fluorinated plasma.The et... Mo/Si muitilayer mirrors(30 periods,doublelayer thickness 7nm)with the AZ-PF514 resist pattern whose smallest lines and spaces structure was 0.5pm were etched by reactive ion etching(RIE)in a fluorinated plasma.The etch rate,selectivity and etch profile were investigated as a function of the gas mixture,pressure,and plasma rf power.The groove depth and the etch proHle were investigated by an atomic force microscope before RIE,after RIE and after resist removal. 展开更多
关键词 MO/SI smallest SELECTIVITY
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