We demonstrate low-loss hydrogenated amorphous silicon(a-Si:H) waveguides by hot-wire chemical vapor deposition(HWCVD). The effect of hydrogenation in a-Si at different deposition temperatures has been investigated an...We demonstrate low-loss hydrogenated amorphous silicon(a-Si:H) waveguides by hot-wire chemical vapor deposition(HWCVD). The effect of hydrogenation in a-Si at different deposition temperatures has been investigated and analyzed by Raman spectroscopy. We obtained an optical quality a-Si:H waveguide deposited at 230°C that has a strong Raman peak shift at 480 cm^(-1), peak width(full width at half-maximum) of 68.9 cm^(-1), and bond angle deviation of 8.98°. Optical transmission measurement shows a low propagation loss of 0.8 dB/cm at the1550 nm wavelength, which is the first, to our knowledge, report for a HWCVD a-Si:H waveguide.展开更多
基金Engineering and Physical Sciences Research Council(EPSRC)(EP/L00044X/1,EP/N013247/1,EP/L02112G/1)
文摘We demonstrate low-loss hydrogenated amorphous silicon(a-Si:H) waveguides by hot-wire chemical vapor deposition(HWCVD). The effect of hydrogenation in a-Si at different deposition temperatures has been investigated and analyzed by Raman spectroscopy. We obtained an optical quality a-Si:H waveguide deposited at 230°C that has a strong Raman peak shift at 480 cm^(-1), peak width(full width at half-maximum) of 68.9 cm^(-1), and bond angle deviation of 8.98°. Optical transmission measurement shows a low propagation loss of 0.8 dB/cm at the1550 nm wavelength, which is the first, to our knowledge, report for a HWCVD a-Si:H waveguide.
