The electronic structure and optical property of stacked GaN-WS_(2)heterostructure are explored with HSE06 calculation based on density functional theory.The direct band gap of GaN-WS_(2)heterostructure is 1.993 eV,wh...The electronic structure and optical property of stacked GaN-WS_(2)heterostructure are explored with HSE06 calculation based on density functional theory.The direct band gap of GaN-WS_(2)heterostructure is 1.993 eV,which is obviously a type-II band alignment semiconductor.Furthermore,the optical property of GaN-WS_(2)heterostructure such as absorption coefficient is analyzed.These new findings enable GaN-WS_(2)heterostructure to be promising candidates for photovoltaic cells and electronic devices in visible light.展开更多
基金Supported by the National Natural Science Foundation of China(No.1186040026)Educational Commission of Hubei Province of China(No.T201914)Incubation Project for HighLevel Scientific Research Achievements of Hubei Minzu University(No.4205009)
文摘The electronic structure and optical property of stacked GaN-WS_(2)heterostructure are explored with HSE06 calculation based on density functional theory.The direct band gap of GaN-WS_(2)heterostructure is 1.993 eV,which is obviously a type-II band alignment semiconductor.Furthermore,the optical property of GaN-WS_(2)heterostructure such as absorption coefficient is analyzed.These new findings enable GaN-WS_(2)heterostructure to be promising candidates for photovoltaic cells and electronic devices in visible light.
