The electronic states,especially the deep levels of the defects in GaSb/AlSb(001)superlattices have been calculated.The band gap becomes larger and the donor binding energy becomes deeper with the decrease of the quan...The electronic states,especially the deep levels of the defects in GaSb/AlSb(001)superlattices have been calculated.The band gap becomes larger and the donor binding energy becomes deeper with the decrease of the quantum well width.The impurity deep levels exhibit a position dependent relation.展开更多
We extend previous theoretical work to predict the derivatives with respect to the<100>uniaxial stress of the substitutional deep point defect energy levels in Gap and GaAs which,for a defect at a specific site ...We extend previous theoretical work to predict the derivatives with respect to the<100>uniaxial stress of the substitutional deep point defect energy levels in Gap and GaAs which,for a defect at a specific site producing a level of particular symmetry,can be evaluated as a function of their energy levels in the band gap.展开更多
基金supported by the Science Fund of the Chinese Academy of Science.
文摘The electronic states,especially the deep levels of the defects in GaSb/AlSb(001)superlattices have been calculated.The band gap becomes larger and the donor binding energy becomes deeper with the decrease of the quantum well width.The impurity deep levels exhibit a position dependent relation.
基金This work was supported by the Science Fund of the Chinese Academy of Sciences.
文摘We extend previous theoretical work to predict the derivatives with respect to the<100>uniaxial stress of the substitutional deep point defect energy levels in Gap and GaAs which,for a defect at a specific site producing a level of particular symmetry,can be evaluated as a function of their energy levels in the band gap.