Formation of Carbon Nitride Films by Nitrogen Ion Bombardment on C_(60) Films

The synthesis of covalent carbon nitride films becomes an important subject in the materials research field.As a new synthetic method two low-energy(400 and 1000eV)nitrogen ion beams are used to bombard on C_(60) thin films individually.The bombarded films are used for Raman and x-ray photoelectron spectroscopy(XPS)measurements.The results of the analyses show that under the bombardment of 400eV nitrogen ion beam,the film still contains a large amount of undestructed C_(60) molecules.In the case of l000eV bombardment,only a little amount of C_(60) molecules is kept undestructed.The experimental results also show that the destructed carbon species will combine chemically with nitrogen ions to form stable covalent carbon nitride,confirmed by the Raman peaks of,e.g.,2240cm-1.The XPS Nls and Cls lines also indicate the formation of covalent carbon nitride in the bombarded films.

Ion-Beam Bombarding Effects on Deposition of Carbon Nitride Films by Laser Ablation

In order to obtain high quality carbon nitride films,x-ray photoelectron spectroscopy and Raman spectrum were used to analyze several kinds of film:(a)laser-ablated amorphous carbon(a-C)films,(b)a-C films after a 1 keV nitrbgen ion beam bombardment.(c)carbon nitride(CN_(x))films synthesized by ablation assisted with ion beam bombardment,(d)CN_(x) films after a 50eV nitrogen ion beam bombardment,and(e)CN_(x) films after a 1 keV nitrogen ion beam bombardment.The comparison among these films showed that the concurrent deposition of CN_(x) films by ablation and a nitrogen ion beam should be better than the post-treatment of a-C films by nitrogen ion beam bombardment.In the case of concurrent deposited CN_(x) films,a post-treatment by a nitrogen ion beam bombardment with an appropriate energy(possibly less than 1 keV)was proposed to improve the ratio of C-N binding structures in the deposited films.